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Samsung FLEX-MUXONENAND KFKAGH6Q4M Bedienungsanleitung

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Richtige Gebrauchsanleitung

Die Vorschriften verpflichten den Verkäufer zur Übertragung der Gebrauchsanleitung Samsung FLEX-MUXONENAND KFKAGH6Q4M an den Erwerber, zusammen mit der Ware. Eine fehlende Anleitung oder falsche Informationen, die dem Verbraucher übertragen werden, bilden eine Grundlage für eine Reklamation aufgrund Unstimmigkeit des Geräts mit dem Vertrag. Rechtsmäßig lässt man das Anfügen einer Gebrauchsanleitung in anderer Form als Papierform zu, was letztens sehr oft genutzt wird, indem man eine grafische oder elektronische Anleitung von Samsung FLEX-MUXONENAND KFKAGH6Q4M, sowie Anleitungsvideos für Nutzer beifügt. Die Bedingung ist, dass ihre Form leserlich und verständlich ist.

Was ist eine Gebrauchsanleitung?

Das Wort kommt vom lateinischen „instructio”, d.h. ordnen. Demnach kann man in der Anleitung Samsung FLEX-MUXONENAND KFKAGH6Q4M die Beschreibung der Etappen der Vorgehensweisen finden. Das Ziel der Anleitung ist die Belehrung, Vereinfachung des Starts, der Nutzung des Geräts oder auch der Ausführung bestimmter Tätigkeiten. Die Anleitung ist eine Sammlung von Informationen über ein Gegenstand/eine Dienstleistung, ein Hinweis.

Leider widmen nicht viele Nutzer ihre Zeit der Gebrauchsanleitung Samsung FLEX-MUXONENAND KFKAGH6Q4M. Eine gute Gebrauchsanleitung erlaubt nicht nur eine Reihe zusätzlicher Funktionen des gekauften Geräts kennenzulernen, sondern hilft dabei viele Fehler zu vermeiden.

Was sollte also eine ideale Gebrauchsanleitung beinhalten?

Die Gebrauchsanleitung Samsung FLEX-MUXONENAND KFKAGH6Q4M sollte vor allem folgendes enthalten:
- Informationen über technische Daten des Geräts Samsung FLEX-MUXONENAND KFKAGH6Q4M
- Den Namen des Produzenten und das Produktionsjahr des Geräts Samsung FLEX-MUXONENAND KFKAGH6Q4M
- Grundsätze der Bedienung, Regulierung und Wartung des Geräts Samsung FLEX-MUXONENAND KFKAGH6Q4M
- Sicherheitszeichen und Zertifikate, die die Übereinstimmung mit entsprechenden Normen bestätigen

Warum lesen wir keine Gebrauchsanleitungen?

Der Grund dafür ist die fehlende Zeit und die Sicherheit, was die bestimmten Funktionen der gekauften Geräte angeht. Leider ist das Anschließen und Starten von Samsung FLEX-MUXONENAND KFKAGH6Q4M zu wenig. Eine Anleitung beinhaltet eine Reihe von Hinweisen bezüglich bestimmter Funktionen, Sicherheitsgrundsätze, Wartungsarten (sogar das, welche Mittel man benutzen sollte), eventueller Fehler von Samsung FLEX-MUXONENAND KFKAGH6Q4M und Lösungsarten für Probleme, die während der Nutzung auftreten könnten. Immerhin kann man in der Gebrauchsanleitung die Kontaktnummer zum Service Samsung finden, wenn die vorgeschlagenen Lösungen nicht wirksam sind. Aktuell erfreuen sich Anleitungen in Form von interessanten Animationen oder Videoanleitungen an Popularität, die den Nutzer besser ansprechen als eine Broschüre. Diese Art von Anleitung gibt garantiert, dass der Nutzer sich das ganze Video anschaut, ohne die spezifizierten und komplizierten technischen Beschreibungen von Samsung FLEX-MUXONENAND KFKAGH6Q4M zu überspringen, wie es bei der Papierform passiert.

Warum sollte man Gebrauchsanleitungen lesen?

In der Gebrauchsanleitung finden wir vor allem die Antwort über den Bau sowie die Möglichkeiten des Geräts Samsung FLEX-MUXONENAND KFKAGH6Q4M, über die Nutzung bestimmter Accessoires und eine Reihe von Informationen, die erlauben, jegliche Funktionen und Bequemlichkeiten zu nutzen.

Nach dem gelungenen Kauf des Geräts, sollte man einige Zeit für das Kennenlernen jedes Teils der Anleitung von Samsung FLEX-MUXONENAND KFKAGH6Q4M widmen. Aktuell sind sie genau vorbereitet oder übersetzt, damit sie nicht nur verständlich für die Nutzer sind, aber auch ihre grundliegende Hilfs-Informations-Funktion erfüllen.

Inhaltsverzeichnis der Gebrauchsanleitungen

  • Seite 1

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 1 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) . KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die * Samsung Electronics rese rves the right to cha nge product s or specification witho ut notice. INFORMA TION IN THIS DOCUMENT IS PROVID ED IN RELA TION TO SAMSUNG [...]

  • Seite 2

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 2 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Revision History Document T itle Flex-MuxOneNAND Revision History Revision No. 0.0 0.1 History 1. Initial issue. 1. Corrected errata. 2. Chapter 1.3 Product Features revised. 3. Chapter 2.8.16 S tart Address8 Register F107 re[...]

  • Seite 3

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 3 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Revision History Revision No. 0.2 1.0 1.1 History 1. Corrected errata. 2. Chapter 2.1 Detailed Product Description revised. 3. Chapter 2.2 Definitions revised. 4. Chapter 2.8.3 Device ID Register F001h(R ) revised. 5. Chapter[...]

  • Seite 4

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 4 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Co mpany Flex-MuxOneNAND  ‚ Flash memory product family . Sec- tion 1.0 includes a general overview , revision history , and product [...]

  • Seite 5

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 5 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.2 General Overview Flex-MuxOneNAND  is a monolithic integrated circuit with a N AND Flash array using a NOR Flash interface. The chip integrates syst em features including:  A BootRAM(1KB) and bootloader ?[...]

  • Seite 6

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 6 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1.3 Product Features Device Architecture  Design T echnology:  Supply V oltage:  Host Interface:  5KB Internal BufferRAM:  NAND Array: Device Performance ?[...]

  • Seite 7

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 7 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.0 DEVICE DESCRIPTION 2.1 Det ailed Product Description The Flex-MuxOneNAND is an advanced generation, high-performance MLC NAND-based Flash memory(Which can be programmed as both SLC and MLC). It integrates on-chip a conver[...]

  • Seite 8

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 8 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.3 Pin Configuration 2.3.1 4Gb (KFM4GH6Q4M) / 8Gb (KFN8GH6Q4M) (TOP VIEW , Balls Fa cing Down) 63ball FBGA Flex-MuxOneNAND Chip 63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA(4Gb) 63ball, 10mm x 13mm x max 1.2mmt ,[...]

  • Seite 9

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 9 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.3.2 16Gb Product (KFKAGH6Q4M) (TBD) (TOP VIEW , Balls Fa cing Down) 63ball FBGA OneNAND Chip 63ball, 10mm x 13mm x max 1.4mmt , 0.8mm ball pitch FBGA NC NC NC NC NC NC NC CE2 INT2 NC NC NC NC NC NC NC NC INT1 NC NC NC NC NC[...]

  • Seite 10

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 10 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.4 Pin Description NOTE : Do not leave power supply(Vcc-Cor e/Vcc-IO, VSS) disconnect ed. Pin Name Ty p e Nameand Description Host Interface ADQ15~ADQ0 I/O Multiplexed Address/Data bus - Inputs for addresses during read ope[...]

  • Seite 11

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 11 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.5 Block Diagram 2.6 Memory Array Organization The Flex-MuxOneNAND architecture integrates several memory areas on a single chip. 2.6.1 Internal (NAND Array) Me mory Organization The on-chip internal memory is a convertible[...]

  • Seite 12

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 12 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Internal Memory Array Information Internal Memory Array Organization Area Block Page Sector Main(SLC) 256KB 4KB 512B Main(MLC) 512KB S pare(SLC) 8KB 128B 16B S pare(MLC) 16KB 4KB Page0 512B 16B 128B P age0 4KB Page12 7 128B [...]

  • Seite 13

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 13 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.6.2 External (BufferRAM) Me mory Organization The on-chip external memory is co mprised of 3 buffers used for Boot Code storage and data buffering. The BootRAM is a buffer that receives Boot Code from the in ternal memory [...]

  • Seite 14

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 14 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7 Memory Map The following tables are the memory maps for the Flex-MuxOneNAND. 2.7.1 Internal (NAND Array) Me mory Organization The following tables show the Internal Memory address map in word o rder . * Only four sectors[...]

  • Seite 15

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 15 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block64 0040h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block96 0060h SLC: 0000h~00FCh, MLC: 0000h~0[...]

  • Seite 16

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 16 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block128 0080h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block160 00A0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 17

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 17 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block192 00C0h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block224 00E0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 18

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 18 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block256 0100h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block288 0120h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 19

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 19 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block320 0140h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block352 0160h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 20

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 20 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block384 0180h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block416 01A0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 21

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 21 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block448 01C0h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block480 01E0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 22

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 22 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block512 0200h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block544 0220h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 23

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 23 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block576 0240h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block608 0260h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 24

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 24 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block640 0280h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block672 02A0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 25

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 25 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block704 02C0h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block736 02E0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 26

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 26 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block768 0300h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block800 0320h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 27

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 27 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block832 0340h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block864 0360h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 28

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 28 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block896 0380h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block928 03A0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 29

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 29 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Block Block Address [F100h] Page Address [F107h] Size Block Block Address [F100h] Page Address [F107h] Size Block960 03C0h SLC: 0000h~00FCh, MLC: 0000h~01FCh SLC: 256KB, MLC: 512KB Block992 03E0h SLC: 0000h~00FCh, MLC: 0000h[...]

  • Seite 30

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 30 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.2 Internal Memor y Sp are Area Assignment The figure below shows the assignment of the spare area in the Internal Memory NAND Arr ay . Sp are Area Assignment in the Internal Memory NAND Array Information Wor d Byte Note [...]

  • Seite 31

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 31 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.3 External Memory (Bu fferRAM) Address Map The following table shows th e External Me mory address map in Word and Byte Order. Note that the data output is unknown while host reads a regi ster bit of reserved area and du[...]

  • Seite 32

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 32 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.4 External Memory Map Detail Information The tables below show Word Order Address Map informat ion for the BootRAM and DataRAM main and spare areas.  BootRAM(Main area) -0000h~01FFh: 2(sector) x 512byte(NAND main area[...]

  • Seite 33

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 33 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.7.5 External M emory Sp are Area Assignm ent Buf. Wor d Address Byte Address F E D C B A 9 8 7 6 5 4 3 2 1 0 BootS 0 8000h 10000h BI(Bad block Information ) 8001h 10002h Managed by internal ECC logic 8002h 10004h 8003h 100[...]

  • Seite 34

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 34 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Buf. Word Address Byte Address F E D C B A 9 8 7 6 5 4 3 2 1 0 DataS 0_2 8020h 10040h BI(Bad block Information ) 8021h 10042h Managed by internal ECC logic 8022h 10044h 8023h 10046h 4bit ECC parity values 8024h 10048h 8025h [...]

  • Seite 35

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 35 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) NOTE : In case of ‘with ECC’ mode, Fle x-MuxOneNAN D automatically generat es ECC code for both main and spare data of memory during pr og ram operation, but does not update ECC code to spare bufferRAM during loa d opera[...]

  • Seite 36

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 36 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8 Registers Section 2.8 of this specificat ion provides information about t he Flex-MuxOneNAND4G registers. 2.8.1 Register Address Ma p This map describes the register addresses, register name, register description, and ho[...]

  • Seite 37

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 37 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.2 Manufacturer ID Register F000h (R) This Read register describes t he manufacturer's identification. Samsung Electronics Company manufacturer's ID is 00ECh. F000h, default = 00ECh 2.8.3 Device ID Register F001[...]

  • Seite 38

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 38 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.4 V ersion ID Register F 002h This register is reserved for future use. 2.8.5 Dat a Buffer Size Regist er F003h (R) This Read register describes the size of the Data Buffer . F003h, default = 0800h 15 14 13 12 11 10 9876[...]

  • Seite 39

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 39 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.6 Boot Buffer Size Regist er F004h (R) This Read register describes the size of the Boot Buffer . F004h, default = 0200h 2.8.7 Amount of Bu ffers Register F005h (R) This Read register describes the number of each Buffer [...]

  • Seite 40

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 40 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.9 St art Address1 Register F100h (R/W) This Read/Write register describes the NAND Flash block address which will be l oaded, programmed, or erased. F100h, default = 0000h NOTE : For QDP, See Section 7.4 St art Address1 [...]

  • Seite 41

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 41 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.16 S t art Address8 Regis ter F107h (R/W) This Read/Write register describes the NAND Flash start page addre ss in a block for a page load, program operation and the NAND Flash start sector address in a page for a load, [...]

  • Seite 42

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 42 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Sector allocation according t o BSC(CASE1 : FSA=00) Sector allocation according t o BSC(CASE2 : FSA=01) Sector allocation according t o BSC(CASE3 : FSA=10) Sector allocation according t o BSC(CASE4 : FSA=1 1) * The first sec[...]

  • Seite 43

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 43 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.18 Command Register F220 h (R/W) Command can be issued by two following methods, and user ma y select one way or the other to issue appropriate command; 1. Write command into Command Register when INT is at ready stat e.[...]

  • Seite 44

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 44 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.18.1 T wo Methods to Clear Interrupt Register in Command Input T o clear Interrupt Register in command input, user may select one from either following me thods. First method is to turn INT to low by manually writing 000[...]

  • Seite 45

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 45 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.19 System Configuration 1 Register F221 h (R, R/W) This Read/Write register descri bes the system configuration. F221h, default =40C0h Read Mode (RM) Read Mode Information[15] Burst Read Write Latency (BRWL) * Default va[...]

  • Seite 46

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 46 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Burst Length (BL) Host must follow burst length set by BL when reading data in synchronous burst read. NOTE : 1) In case of BootRAM : M ain=512word , S pare=16word In case of Dat aRAM : Main=1Kword, S pare=32word Burst Lengt[...]

  • Seite 47

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 47 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) I/O Buffer Enable (IOBE) IOBE is the I/O Buffer Enable for the INT and RDY signals. At st artup, INT and RDY outputs are High-Z. Bits 6 and 7 become vali d after IOBE is set to "1". IOBE can be reset by a Cold Rese[...]

  • Seite 48

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 48 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Write Mode (WM) Write Mode Information[1] MRS(Mode Register Setting) Descript ion NOTE : 1) Operation not guara nteed for cases not defined in above table. Boot Buffer Write Protect Status(BWPS) Boot Buffer Write Protect Sta[...]

  • Seite 49

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 49 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.20 System Configuration 2 Regist er F222h This register is reserved for future use. 2.8.21 Controller S t atus Register F240h (R) This Read register shows the overall internal st atus of the Flex-MuxOneNAND and the contr[...]

  • Seite 50

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 50 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Lock Status (OTP L ) This bit shows whether the OTP block is locked or unlocked. Locking the OTP has the e ffect of a 'write-pro tect' to guard agains t accidental re-programming of data stored in the OTP block[...]

  • Seite 51

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 51 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Controller Status Register Output Modes NOTE : 1) "1" for PI L Block Lock, "0" for PI L Block Unlock. 2) "1" for 1st B lock OTP Lock, "0" for 1st Block OTP Unlock. 3) "1" for[...]

  • Seite 52

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 52 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Read Interrupt (RI) This is the Read interrupt bit. RI Interrupt [ 7] Write Interrupt (WI) This is the Write interrupt bit. WI Interrupt [6] Erase Interrupt (EI) This is the Erase interrupt bit. EI Interrupt [5] Stat u s Con[...]

  • Seite 53

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 53 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Reset Interrupt (RSTI) This is the Reset interrupt bit. RSTI Interrupt [4] 2.8.23 S t art Block Addre ss Regist er F24Ch (R/W) This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting[...]

  • Seite 54

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 54 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 2.8.26 ECC S t atus Register 1 FF00 h (R) This Read register shows the Error Correction Status. Th e Flex-MuxOneNAND can correct up to 4-bit errors. ECC can be performed on the NAND Flash main and spare memory areas. The ECC[...]

  • Seite 55

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 55 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.0 DEVICE OPERA TION This section of the data sheet discusses the operation of the Flex-MuxOneN AND device . It is followed by AC/DC Characteristics and T iming Diagrams which may be consulted for further information. The F[...]

  • Seite 56

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 56 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1.1 Reset Flex-Mux OneNAND Command The Reset command is given by writing 00F0h to the boot partiti on address. Reset will return a ll default values into the device . 3.1.2 Load Dat a Into Buffer Command Load Data into Buf[...]

  • Seite 57

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 57 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.2 Device Bus Operation The device bus operations are shown in the ta ble below. NOTE : 1) L=VIL (Low), H=VIH (High), X=Don’t Care. Operation CE OE WE ADQ0~15 RP CLK AV D S tandby H X X High-Z H X X W a r m R e s e t XXX [...]

  • Seite 58

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 58 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.3 Reset Mode Operation The Flex-MuxOneNAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Array Reset. Section 3.3 discusses the operation of these reset modes. The Register Reset T able shows the which registers a[...]

  • Seite 59

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 59 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.3.1 Cold Reset Mode Op eration See Timing Diagram 6.15 At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset s ignal. This trig- gers boot code loadin[...]

  • Seite 60

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 60 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4 Write Protection Op eration The Flex-MuxOneNAND can be write-protected to preven t re-programming or erasure of data. The areas of write-protection are the BootRAM, and the NAND Flash Array . 3.4.1 BootRAM W rite Protect[...]

  • Seite 61

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 61 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4.3.1 Unlocked NAND Array Wr ite Protection S t ate An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tig ht using t he appro- priate software command(Locked-[...]

  • Seite 62

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 62 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.4.3.3 Locked-tigh t NAND Array Write Protection St ate A block that is in a locked-tight state can only be changed to lo cked state after a Cold or Warm Reset. Unlock and Lock command sequences will not affect its st ate. [...]

  • Seite 63

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 63 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Data Protection Operation Flow Diagram * Samsung strong ly recommends to fo llow the ab ove flow ch art NOTE : 1) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapter 2.8.18.1 [...]

  • Seite 64

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 64 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) All Block Unlock Flow Diagram *Samsung strongly recommen ds to follow the above flow chart NOTE : 1) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapter 2.8.18.1 2) All Block [...]

  • Seite 65

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 65 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.5 Dat a Protection During Power Down Operation See Timing Diagrams 6.19 The device is designed to offer protection from any involuntary program/erase during power-transitions. RP pin which provides hardware protection is r[...]

  • Seite 66

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 66 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.6.1 Superload Oper ation See Timing Diagrams 6.10 The Superload operation is used to read mu ltiple pages. During Superload operation, up to 4bit errors are corrected. Once the first data is loaded, an interrupt status ret[...]

  • Seite 67

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 67 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.6.2 LSB Page Recov ery Read MLC NAND Flash cell has paired pages - LSB page and MSB page. LSB p age has lower page address and MSB p age has higher page address in paired pages. If power off occurs during MSB page program,[...]

  • Seite 68

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 68 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7 Read Operation See Timing Diagrams 6.1,6.2, 6.3 and 6.4. The device has two read modes; Asynchr onous Read an d Synchronous Burst Read. The initial state machine automatically set s the device into the Asynchronous Read [...]

  • Seite 69

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 69 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7.2.1 Continuous Linear Burst Read Operation See Timing Diagram 6.2 First Clock Cycle The initial word is output at tIAA after the rising edge of the fi rst CLK cycle. The RDY output indicates the initial word is r eady to[...]

  • Seite 70

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 70 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.7.2.3 Programmable Burst Read La tency Operation See Timing Diagrams 6.1 and 6.2 Upon power up, the number of initial cl ock cycles from V alid Address (A VD ) to initial data defaults to four clocks. The number of clock c[...]

  • Seite 71

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 71 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.8 Synchronous Write(RM=1, WM =1) See Timing Diagram 6.6, 6.7 and 6.8 Burst mode operations enable high-spee d synchronous read and write operations. Burst oper ations consist of a multi-clock sequen ce that must be perform[...]

  • Seite 72

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 72 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9 Program Operation See Timing Diagrams 6.1 1 The Program operation is used to program data from the on-chip BufferRAMs into the NAND FLASH memory array . The device has two 2KB data buf fers, 1 Page (4KB + 128B) in size. [...]

  • Seite 73

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 73 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Paired Page Address Information In case of MLC partition, when Program, Cache Program, Interleav e cache program, Copy-back with r andom data in operations are a bnor- mally aborted(eg. power-down), no t only page data under[...]

  • Seite 74

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 74 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Pairing of pages in MLC block: 0 1 2 3 4 5 6 7 8 9 A B C D E F 10 11 12 13 14 15 16 17 78 79 7A 7B 7C 7D 7E 7F . . . XX Represent s a Page number XX in an MLC block Represent s Pairing of p ages in an MLC block[...]

  • Seite 75

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 75 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Program Operation Fl ow Diagram NOTE : 1) DBS must be set before data input. 2) Data input could be done anywhere between "S tart" and "Write Program Command". 3) FSA must be 00 within program operat ion.[...]

  • Seite 76

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 76 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Program Interleave(@DDP) Flow C hart NOTE : 1) DBS must be set before data input. 2) FSA must be 00 and BSC must be 000 within pro gram operation 3) BSA must be 1000 and BSC must be 000. Start Write ‘DFS*, FBA ’ of Flash[...]

  • Seite 77

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 77 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9.1 Cache Program Operation See Timing Diagram 6.12 The Cache Program is to enhance the perfor mance of Program Operation. Employing Cache Program op eration, transfer time from Hos t to DataRAM can be shadowed, therefore [...]

  • Seite 78

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 78 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Cache Program Operation Fl ow Diagram NOTE : 1) DBS must be set before dat a input. 2) FSA must be 00 and BSC must be 000 within pro gram operation. 3) BSA must be 1000. 4) Writing Syste m Configuration Register is optional [...]

  • Seite 79

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 79 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.9.2 Interl eave Cach e Program Ope ration The Interleave Cache Program is available only on DDP . Host can write data on a chip while programming anothe r chip with this operation. Interleave Cache Program is executing as [...]

  • Seite 80

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 80 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Interleave Cache Program Operation F low Diagram NOTE : 1) DBS must be set before dat a input. 2) FSA must be 00 and BSC must be 000 within pro gram operation. 3) BSA must be 1000. 4) Writing Syste m Configuration Register i[...]

  • Seite 81

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 81 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.10 Copy-Back Program Operat ion with Random Data Input The Copy-Back Program Operation with Random Data Input in Flex -MuxOneNAND consists of 3 phases, Load data into DataRAM, Modify data and program into designated p age.[...]

  • Seite 82

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 82 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1 1 Erase Operation 3.1 1 .1 Block Erase Oper ation See Timing Diagram 6.14 The device can be erased one block at a time. T o erase a block is to write all 1's into the desired memory block by executing t he Internal [...]

  • Seite 83

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 83 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Erase Interleave 1) (@DDP) Flow Chart NOTE : 1) Erase Suspend and Erase Resume Operations are not suppor ted in Erase Interleave(@DDP). Start Write ‘D FS*, FBA ’ of Flash Add: F100h D Q=DFS*, FBA Select DataRAM for DDP A[...]

  • Seite 84

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 84 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.1 1.2 Erase Suspend / Erase Resume Operation The Erase Suspend/Erase Resume Commands in terrupt and restart a Bl ock Erase operation so tha t user may perform another urgent o pera- tion on the block that is not bei ng des[...]

  • Seite 85

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 85 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12 Partition Information (P I) Block (SLC Only) One Block of the SLC NAND Flash Array memory is res erved for Partition In formation (PI) Block. The block can be read, programmed and erased using the same operatio ns as an[...]

  • Seite 86

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 86 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1 PI Block Boundary Information s etting It is 1st word of sector0 of page0 of main area of PI Blo ck. The Lock bits for PI Block and Boundary address of SLC and MLC are stored. After shipment, it is initially programme[...]

  • Seite 87

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 87 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.1 PI Block Acces s mode entry The PI area is a separate part of the NAND Flash Array memory . It is accessed by issuing PI A ccess command(66h) instead of w rit ing a Flash Block Address(FBA) in the S tartAddress1 reg[...]

  • Seite 88

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 88 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.2 PI Block Erase The PI Block Erase Operation erases the ent ire PI block including Partition Informati on. PI Block Access mode entry must be don e before issuing Erase operation for PI Block. Erasing the PI Area [...]

  • Seite 89

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 89 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.3 PI Block Progra m Operation The PI Block Program Operation accesses the PI area and programs content from the DataRAM on-chip buffer to the designated page (s) of the PI. A memory location in the PI area can be prog[...]

  • Seite 90

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 90 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.1.4 PI Up date Once new partition information is programmed into the PI block, an internal register that is invisible to users must be updated for the changes in PI to be applied. This internal register which stores par[...]

  • Seite 91

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 91 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.12.2 PI Block Load Operation A PI Block Load Operation accesses the PI area and transfers identi fied content fr om the PI to the DataRAM on-chip buffer , thus making the PI contents available to the Host. The PI area is a[...]

  • Seite 92

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 92 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13 OTP Operation (SLC only) One Block of the NAND Flash Array memory is reserv e d as a One-Time Programmable Block memory area. Also, 1st Block of NAND Flas h Array can be used as OTP . OTP area and 1st block OTP area mus[...]

  • Seite 93

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 93 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Area Structure 1st Block OTP Area Structure One Block: 256KB+8KB 64pages Manufacturer Area : page 50 to page 63 14pages User Area : page 0 to page 49 50pages Sector(spare area):16B Sector(main area): 512B Page:4KB+[...]

  • Seite 94

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 94 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.1 OTP Block L oad Operation An OTP Block Load Operation accesses the OTP area and transfer s i dentified content from the OTP to the D ataRAM on-chip buffer , thus making the OTP contents available to the Host. The OTP [...]

  • Seite 95

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 95 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.2 OTP Block Pro gram Operation An OTP Block Program Operation accesses the OTP area and program s content from the DataRAM on-chip buffer to the designated pag e(s) of the OTP . A memory location in the OT P area can be[...]

  • Seite 96

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 96 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Program Operatio n Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapter 2.8.18.[...]

  • Seite 97

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 97 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.3 OTP Block L ock Operation Even though the OTP area can only be programmed once witho ut erase capability , it can be locked when the device starts up to pr event any changes from being made. Unlike the main area of th[...]

  • Seite 98

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 98 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP Block Lock Operatio n Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapter 2.8.18.1 3[...]

  • Seite 99

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 99 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.4 1st Block OT P Lock Operation 1st Block can be used as OTP , for secured booting operation. 1st Block OTP can be ac cessed just as any other NAND Flash Array Blocks befor e it is locked, however , once 1st Block is lo[...]

  • Seite 100

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 100 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 1st Block OTP Lock Operation Flow Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapter 2.8.18[...]

  • Seite 101

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 101 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.13.5 OTP and 1st Block OTP Loc k Operation OTP and 1st Block can be locked simultaneously , for lo cking bit lies in the same word of OTP area. 1st Block OTP can be ac cessed just as any other NAND Flash Array Blocks befo[...]

  • Seite 102

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 102 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) OTP and 1st Block OTP Lock Operation Flo w Chart NOTE : 1) FBA(NAND Flash Block Address) could be omitted or any address. 2) ‘Write 0 to interr upt register’ step may be ignored when using INT auto mode. Ref er to chapt[...]

  • Seite 103

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 103 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.14 DQ6 T oggle Bit The Flex-MuxOneNAND device has DQ6 T oggle bit. T oggle bit is another option to dete ct whether an internal load operation is in progress or completed. Once the BufferRAM(BootRAM, DataRAM0, DataRAM1) i[...]

  • Seite 104

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 104 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.15 ECC Operation The Flex-MuxOneNAND device has on-chip ECC wi th the capability of correcting up to 4-bi t errors in the NAND Flash Array memory main and spare areas (512+16)B. As the device transfers data from a BufferR[...]

  • Seite 105

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 105 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 3.16 Invalid Block Operation Invalid blocks are defined as blocks in t he device's NAND Flash Array memory that cont ain five or more inva lid bits which cause status failure during Program and Erase operation. The inf[...]

  • Seite 106

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 106 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Invalid Block T abl e Creation Flow Chart 3.16.2 Invalid Block Replaceme nt Operation Within its life time, additional invalid blocks may develop with NAND Flash Array me mory . Refer to the device's qualification r ep[...]

  • Seite 107

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 107 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) Referring to the diagram for further illustration, whe n an er ror happens in the nth page of block 'A' during program operation, co py the data in the 1st ~ (n-1)th page to the same location of block 'B&apos[...]

  • Seite 108

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 108 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings NOTE : 1) Minimum DC voltage is -0.5V on In put/ Output pins. During transit ions, this level should not fall to POR level(typ. 1.5V @1.8 V device). Maximum DC voltage may[...]

  • Seite 109

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 109 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 4.3 DC Characteristics NOTE : 1) CE should be VIH for RDY . IOBE should be ‘0’ for INT . 2) I CC active for Host access 3) I CC active for Internal operation. (without host access) 4) Vccq is equivalent to Vcc-I O Param[...]

  • Seite 110

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 110 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.0 AC CHARACTERISTICS 5.1 AC T est Conditio ns 5.2 Device Cap acit ance CAP ACIT ANCE (T A = 25  C, V CC = 1.8V , f = 1.0MHz) NOTE : 1) Capacit ance is periodically sampled and not 100% te sted. 5.3 V alid Block Ch arac[...]

  • Seite 111

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 111 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.4 AC Characteristics fo r Synchronous Burst Read See Timing Diagrams 6.1 and 6.2 NOTE : 1) If OE is disabled at the same time or before CE is disabled, the output will go to high-z by t OEZ . If CE is disabled at the same[...]

  • Seite 112

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 112 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.5 AC Characteristics for Asynchronous Read See Timing Diagrams 6.3 and 6.4. NOTE : 1) If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ. If CE is disabled at the same time o[...]

  • Seite 113

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 113 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.7 AC Characteristics for Asynchronous Write See Timing Diagrams 6.5 5.8 AC Characteristics for Burst Write Operation See Timing Diagrams 6.6, 6.7 and 6.8. NOTE : 1)T arget Clock frequency is 83Mhz Parameter Symbol Min Max[...]

  • Seite 114

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 114 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 5.9 AC Characteristics for Loa d/Program/Erase Performance See Timing Diagrams 6.9, 6.10, 6.1 1, 6.12, 6.13 and 6.14 NOTE : 1) These parameters are tested based on INT bit of interrupt re gister . Because the time on INT pi[...]

  • Seite 115

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 115 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst R ead Mode with W rap Around See AC Characteristics T able 5.4 6.2 Continuous Linear Burst Re ad Mode with Wrap Around See AC Characteristics T able 5.4 t CES t AV D S t AV D H t [...]

  • Seite 116

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 116 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.3 Asynchronous Read (V A T ransition Before A VD Low) See AC Characteristics T able 5.5 NOTE : V A=V alid Read Ad dress, RD=Read Data. See timing diagram 6.20, 6.21 for tASO 6.4 Asynchronous Read (V A T ransition Af ter A[...]

  • Seite 117

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 117 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.5 Asynchronous Write See AC Characteristics T able 5.7 NOTE : V A=V alid Read Address, WD=Wri te Data. CE WE OE RP t CS t DS RDY t WPL t WPH t WC t CER Hi-Z Hi-Z CLK V IL t CH ADQ15-ADQ0 Valid WD VA Valid WD AVD t AAVDS t[...]

  • Seite 118

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 118 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.6 8-Word Linear Burst W rite Mode See AC Characteristics T able 5.8 6.7 Burst Write Operation followed by Burst Read See AC Characteristics T able 5.8 t CES t AV D S t AV D H t ACS t ACH t RDYO t WDH t WDS t CLK Hi-Z CE C[...]

  • Seite 119

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 119 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.8 St art Initial Burst Write Operation See AC Characteristics T able 5.8 t CES t AV D S t AV D H t ACS t ACH t RDYO t WDH t WDS t CLK Hi-Z CE CLK AV D OE RDY t RDYS t RDY A A/DQ0: A/DQ15 t CER D0 t CLKH t CLKL t CER WE t [...]

  • Seite 120

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 120 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.9 Load Operation Timing See AC Characteristics T able 5.7 and T able 5.9 NOTE : 1) AA = Address of address register CA = Address of command register LCD = Load Command LMA = Address of memory to be loaded BA = Address of [...]

  • Seite 121

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 121 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.10 Superload Operation Timing See AC Characteristics T able 5.7 and T able 5.9 Superload Operation T iming Diagram INT A/DQ0: A/DQ15 1st Address Host reads 1st data from Dat aRAM  Settin g 1st Setting  Host reads nt[...]

  • Seite 122

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 122 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.1 1 Program Operation Timing See AC Characteristics T able 5.7 and T able 5.9 NOTE : 1) AA = Address of address register CA = Address of command register PCD = Program Command PMA = Address of memory to be programmed BA =[...]

  • Seite 123

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 123 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.12 Cache Program Operation Timing See AC Characteristics T able 5.7 and T able 5.9 1st data input 2nd data input Address Setting cache program Command ADQ0~ A1, A2, A3 : Address of DataRAM to be written INT : Indicator fo[...]

  • Seite 124

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 124 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.13 Interleave Cache Pr ogram Operation Timing See AC Characteristics T able 5.7 and T able 5.9 1st data input 2nd data input Address Setting cache program Command ADQ0~ A1, A2, An : Address of DataRAM to be written. INT :[...]

  • Seite 125

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 125 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.14 Block Erase Operation Timing See AC Characteristics T able 5.7 and T able 5.9 NOTE : 1) AA = Address of address register CA = Address of command register ECD = Eras e Comma nd EMA = Address of memory to be erased SA = [...]

  • Seite 126

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 126 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.15 Cold Reset Timing NOTE : 1) Bootcode copy operation st arts 400u s later than POR activation. The system power should reach Vcc afte r POR triggering level(typ. 1.5V) withi n 400us for valid boot code dat a. 2) 1KB Boo[...]

  • Seite 127

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 127 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.16 W a rm Reset Timing See AC Characteristics T able 5.6 NOTE : 1) The status which can acce pt any register based oper ation(Load, Program, Er ase command, etc). 2) The status where reset is ongoing. 3) The status allows[...]

  • Seite 128

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 128 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.17 Hot Reset Timing See AC Characteristics T able 5.6 NOTE : 1) Internal rese t operation means that the device initializes in ternal registers and makes output signals go to d efault status and b ufferRAM da ta are ke pt[...]

  • Seite 129

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 129 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.18 NAND Flash Core Reset T iming See AC Characteristics T able 5.6 6.19 Dat a Protection Timing Duri ng Power Down The device is designed to offer protection from any in voluntary program/erase during power-transitions. R[...]

  • Seite 130

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 130 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.20 T oggle Bit Timing in Asynchrono us Read (V A T ransition Before A VD Low) See AC Characteristics T able 5.5 NOTE : 1) V A=V alid Read Address, RD=Read Data. 2) Before IOBE is set to 1, RDY and I NT pin are High-Z stat[...]

  • Seite 131

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 131 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 6.22 INT auto mode See AC Characteristics T able 5.10. NOTE : 1) INT pin polarity is based on ‘IOBE =1 and INT pol=1 (default)’ setting Write command into Command Register INT will automatically turn to Busy S tate INT [...]

  • Seite 132

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 132 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.0 TECHNICAL AND APPLICA TION NOTES From time-to-time supplemental technical information and application notes pertaining to the design and operation of the device in a system are included in this section. Contact your Sam[...]

  • Seite 133

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 133 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.1 The INT Pin to a Host General Purpose I/O INT can be tied to a Host GPIO to detect the rising edge of INT , signaling the end of a command operation. This can be configured to operate either synchronously or asynchron[...]

  • Seite 134

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 134 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.2 Polling the Inte rrupt Register S t atus Bit An alternate method of determining the end of an operation is to c ont inuously monitor the Interrupt Status Register Bit instead of using the INT pin. When using interrupt[...]

  • Seite 135

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 135 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.1.3 Determining Rp V a lue (DDP , QDP O nly) For general operation, INT operates as normal outpu t pin, so that tF is equivalent to tR (below 10ns). But since INT oper ates a s open drain with 50K ohm for Reset (Cold/Hot/[...]

  • Seite 136

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 136 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) ~50k ohm INT Vcc or Vccq Rp INT pol = ‘Low’ Busy S t ate Ready VOH tf tr VOL Vss Vcc tr ,tf Ibusy [mA] Rp( oh m) Ibusy tf[ u s ] KFN8GH6Q4M @ Vcc = 1.8V , T a = 25  C , C L = 30pF 1K 10K 20K 30K 0 . 111 tr[ns] 0.959 [...]

  • Seite 137

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 137 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.2 Boot Sequence One of the best features Flex-MuxOneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader despite the fact that its core architecture is based on NAND Fl a[...]

  • Seite 138

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 138 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) NOTE : 1) Step 2 and Step 3 can be copied into DRAM thro ugh two DataRAMs. Reservoir File System Os Image NBL3 NBL2 Partition 6 Block 162 Block 2 Block 1 Block 0 Partition 5 Sector0 BL2 Partition 4 Partition 3 Partition of [...]

  • Seite 139

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 139 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.3 Partition of Flex-MuxOneNAND Flex-MuxOneNAND is the combo device whic h has SLC and MLC partition in one-chip. Generally , write intensive dat a require SLC-re lia bility but read and density oriented data such as music[...]

  • Seite 140

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 140 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 7.4 DDP and QDP Description DDP(Dual Die Package): 8Gb DDP Flex-OneNAND contains two chips of 4Gb which are multiplexed such that they provide a single address range interf ace, w ith dou- ble the storage capacity. Since th[...]

  • Seite 141

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 141 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 8.0 P ACKAGE DIMENSIONS (TBD) 0.10 MAX 0.45 ±0.05 0.32 ±0.0 5 0.9 ±0.10 BOTTOM VIEW TOP VIEW A C E B D F 0.80x9=7.20 A 0.80x1 1=8.80 63-   0.45 ±0.0 5 G 4.40 0 . 8 0 B 0.20 M A B  (Datum A) (Datum B) 2 543 1 6 [...]

  • Seite 142

    Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx) - 142 - FLASH MEMORY Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) 16G product (KFKAG H6Q4M) 0.10 MAX 0.45 ±0.05 0.32 ±0.0 5 1.3 ±0.10 BOTTOM VIEW TOP VIEW A C E B D F 0.80x9=7.20 A 0.80x1 1=8.80 63-   0.45 ±0.0 5 G 4.40 0 . 8 0 B 0.20 M A B  (Datum A) (Datum B) 2 543 1 6 3.60[...]