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Philips TDA8950 manuel d'utilisation

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Table des matières du manuel d’utilisation

  • Page 1

    1. General description The TD A8950 is a high efficiency class-D audio power amplifier . The typical output power is 2 × 150 W with a speaker load impedance of 4 Ω . The TD A8950 is av ailable in the HSOP24 po wer pac kage and DBS23P power pac kage. The amplifier operates ov er a wide supply v oltage range from ± 12.5 V to ± 40 V and consum[...]

  • Page 2

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 2 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 4. Quic k reference data 5. Or dering information T able 1. Quick ref erence data Symbol P arameter Conditions Min Ty p Max Unit General, V P = ± 35 V V P supply voltage ± [...]

  • Page 3

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 3 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 6. Bloc k diagram The pin numbers in parenthesis ref er to type number TD A8950J. Fig 1. Block dia gram 001aah653 OUT1 V SSP1 V DDP2 DRIVER HIGH OUT2 BOOT2 TDA8950TH (TDA8950[...]

  • Page 4

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 4 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 7. Pinning inf ormation 7.1 Pinning Fig 2. Pin configuration TD A8950TH Fig 3. Pin configuration TD A8950J TD A8950TH VSSD VSSA VDDP2 SGND BOOT2 VDDA OUT2 IN2M VSSP2 IN2P n[...]

  • Page 5

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 5 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 7.2 Pin description 8. Functional description 8.1 General The TD A8950 is a two-channel audio po wer amplifier using class-D technology . The audio input signal is conv er t[...]

  • Page 6

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 6 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier The TD A8950 one-chip class-D amplifier contains high power s witches, drivers, timing and handshaking between the pow er switches and some control logic. Also an adv anced [...]

  • Page 7

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 7 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier In order to fully charge the coupling capacitors at the inputs, the amplifier will remain automatically in the Mute mode bef ore switching to the Oper ating mode. A complete[...]

  • Page 8

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 8 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 8.2 Pulse width modulation frequency The output signal of the amplifier is a PWM signal with a carrier frequency that typically lies between 300 kHz and 400 kHz. Using a 2nd[...]

  • Page 9

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 9 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier TFB is specified at the temperature v alue T act(th_fold) where the closed loop v oltage gain is reduced with 6 dB. The r ange of the TFB is: T act(th_fold) − 5 ° C < [...]

  • Page 10

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 10 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier Should there be an impedance drop (e.g. due to dynamic beha vior of the loudspeaker) the same protection will be activated. The maxim um output current will again be limited[...]

  • Page 11

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 11 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier [1] Amplifier gain will depend on junction temper ature and heatsink size. [2] Only complete shutdo wn of amplifier if shor t-circuit impedance is below threshold of 1 Ω[...]

  • Page 12

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 12 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 9. Limiting v alues 10. Thermal characteristics T able 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P arameter Conditions Min[...]

  • Page 13

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 13 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 11. Static characteristics [1] The circuit is DC adjusted at V P = ± 12.5 V to ± 42.5 V . [2] With respect to SGND (0 V). [3] The tr ansition between Standby and Mute mode[...]

  • Page 14

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 14 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 12. Dynamic characteristics 12.1 Switching characteristics [1] When using an e xternal oscillator , the f osc(ext) frequency (500 kHz minimum, 900 kHz maximum) will result i[...]

  • Page 15

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 15 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 12.2 Stereo and dual SE application characteristics [1] R sL is the series resistance of inductor of low-pass LC filter in the application. [2] Output po wer is measured in[...]

  • Page 16

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 16 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 12.3 Mono BTL application characteristics [1] R sL is the series resistance of inductor of low-pass LC filter in the application. [2] Output po wer is measured indirectly; [...]

  • Page 17

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 17 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 13. Application inf ormation 13.1 Mono BTL application When using the power amplifier in a mono BTL application the inputs of both channels must be connected in parallel an[...]

  • Page 18

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 18 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 13.3.2 Bridge-Tied Load (BTL) Maximum output po wer : (3) Maximum current internally limited to 9.2 A: (4) V ariables: • R L : load impedance • R sL : series impedance o[...]

  • Page 19

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 19 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 13.5 Noise Noise should be measured using a high order low-pass filter with a cut-off frequency of 20 kHz. The standard audio band pass filters, used in audio analyz ers, [...]

  • Page 20

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 20 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier The audio signal has a crest f actor of 10 (the ratio between peak pow er and av erage pow er (20 dB)), this means that the av erage output power is 1 ⁄ 10 of the peak pow[...]

  • Page 21

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 21 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 100 ms. The a ver age dissipation will be low in this situation because of this low duty cycle . If the ov er current condition is remov ed the amplifier will remain in Ope[...]

  • Page 22

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  • Page 23

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 23 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 13.10 Lay out and grounding T o obtain a high-lev el system perf or mance, cer tain grounding techniques are essential. The input ref erence grounds hav e to be tied with th[...]

  • Page 24

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 24 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 13.11 Curves measured in reference design V P = ± 35 V , 2 × 4 Ω SE configuration. (1) OUT2, f i = 6 kHz (2) OUT2, f i = 1 kHz (3) OUT2, f i = 100 Hz Fig 12. THD as a f[...]

  • Page 25

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 25 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , f osc = 350 kHz, 1 × 8 Ω BTL configuration. (1) f i = 6 kHz (2) f i = 1 kHz (3) f i = 100 Hz Fig 14. THD as a function of output power , BTL configurati[...]

  • Page 26

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 26 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , 2 × 6 Ω SE configuration. (1) OUT2, P o = 1 W (2) OUT2, P o = 10 W Fig 16. THD as a function of frequency , SE configuration with 2 × 6 Ω load V P = [...]

  • Page 27

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 27 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , 2 × 4 Ω SE configuration For OUT1 and OUT2 f or both 1 W and 10 W . Fig 18. Channel separation as a function of frequency , SE configuration with 2 × 4[...]

  • Page 28

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 28 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , f i = 1 kHz, f osc = 325 kHz (1) 2 × 4 Ω SE configuration (2) 2 × 6 Ω SE configuration (3) 2 × 8 Ω SE configuration Fig 20. Po wer dissipation as[...]

  • Page 29

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 29 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier f i = 1 kHz, f osc = 325 kHz Note: infinite heat sink used. (1) THD = 10 %, 4 Ω (2) THD = 0.5 %, 4 Ω ; THD = 10 %, 6 Ω (3) THD = 0.5 %, 6 Ω ; THD = 10 %, 8 Ω (4) [...]

  • Page 30

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 30 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , V i = 100 mV , R s = 0 Ω , C i = 330 pF . (1) 1 × 8 Ω BTL configuration (2) 2 × 4 Ω SE configuration (3) 2 × 6 Ω SE configuration (4) 2 × 8 ?[...]

  • Page 31

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 31 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier Ripple on V SS , shor t on input pins. V P = ± 35 V , R L = 4 Ω, V ripple = 2 V (p-p). (1) OUT2, mute (2) OUT2, on (3) OUT2, standby Fig 26. SVRR as function of ripple fr[...]

  • Page 32

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 32 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier V P = ± 35 V , V i = 2 V (rms), f osc = 325 kHz (1) OUT2, 8 Ω (2) OUT2, 6 Ω (3) OUT2, 4 Ω Fig 28. Mute attenuation as function of frequency 001aai713 f (Hz) 10 10 5 1[...]

  • Page 33

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 33 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 14. P ac kage outline Fig 29. Packa ge outline SOT411-1 (DBS23P) UNIT A 2 REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 4.6 4.3 A 4 1.15 0.85 [...]

  • Page 34

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 34 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier Fig 30. Packa ge outline SOT566-3 (HSOP24) UNIT A 4 (1) REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 03-02-18 03-07-23 IEC JEDEC JEITA mm + 0.08 − 0.04 3.5 0.[...]

  • Page 35

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 35 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 15. Soldering of SMD pac kages This te xt provides a v er y br ief insight into a comple x technology . A more in-depth account of soldering ICs can be found in Application [...]

  • Page 36

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 36 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 15.4 Reflow soldering K ey char acteristics in reflow soldering are: • Lead-free v ersus SnPb solder ing; note that a lead-free reflow process usually leads to higher m[...]

  • Page 37

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 37 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier F or fur ther information on temperature profiles, ref er to Application Note AN10365 “Surf ace mount reflow soldering description” . 16. Revision history MSL: Moistur[...]

  • Page 38

    TDA8950_1 © NXP B.V . 2008. All rights reserved. Preliminary data sheet Rev . 01 — 9 September 2008 38 of 39 NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier 17. Legal inf ormation 17.1 Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘shor t data shee[...]

  • Page 39

    NXP Semiconductors TD A8950 2 × 150 W class-D po wer amplifier © NXP B.V . 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 September 2008 Document identifier: TDA8950_1 Please be aware that important notices concerning[...]