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Cypress CY7C1316BV18 manuale d’uso - BKManuals
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Cypress CY7C1316BV18 manuale d’uso

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Che cosa è il manuale d’uso?

La parola deriva dal latino "instructio", cioè organizzare. Così, il manuale d’uso Cypress CY7C1316BV18 descrive le fasi del procedimento. Lo scopo del manuale d’uso è istruire, facilitare lo avviamento, l'uso di attrezzature o l’esecuzione di determinate azioni. Il manuale è una raccolta di informazioni sull'oggetto/servizio, un suggerimento.

Purtroppo, pochi utenti prendono il tempo di leggere il manuale d’uso, e un buono manuale non solo permette di conoscere una serie di funzionalità aggiuntive del dispositivo acquistato, ma anche evitare la maggioranza dei guasti.

Quindi cosa dovrebbe contenere il manuale perfetto?

Innanzitutto, il manuale d’uso Cypress CY7C1316BV18 dovrebbe contenere:
- informazioni sui dati tecnici del dispositivo Cypress CY7C1316BV18
- nome del fabbricante e anno di fabbricazione Cypress CY7C1316BV18
- istruzioni per l'uso, la regolazione e la manutenzione delle attrezzature Cypress CY7C1316BV18
- segnaletica di sicurezza e certificati che confermano la conformità con le norme pertinenti

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Generalmente questo è dovuto alla mancanza di tempo e certezza per quanto riguarda la funzionalità specifica delle attrezzature acquistate. Purtroppo, la connessione e l’avvio Cypress CY7C1316BV18 non sono sufficienti. Questo manuale contiene una serie di linee guida per funzionalità specifiche, la sicurezza, metodi di manutenzione (anche i mezzi che dovrebbero essere usati), eventuali difetti Cypress CY7C1316BV18 e modi per risolvere i problemi più comuni durante l'uso. Infine, il manuale contiene le coordinate del servizio Cypress in assenza dell'efficacia delle soluzioni proposte. Attualmente, i manuali d’uso sotto forma di animazioni interessanti e video didattici che sono migliori che la brochure suscitano un interesse considerevole. Questo tipo di manuale permette all'utente di visualizzare tutto il video didattico senza saltare le specifiche e complicate descrizioni tecniche Cypress CY7C1316BV18, come nel caso della versione cartacea.

Perché leggere il manuale d’uso?

Prima di tutto, contiene la risposta sulla struttura, le possibilità del dispositivo Cypress CY7C1316BV18, l'uso di vari accessori ed una serie di informazioni per sfruttare totalmente tutte le caratteristiche e servizi.

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Sommario del manuale d’uso

  • Pagina 1

    18-Mbit DDR-II SRAM 2-W ord Burst Architecture CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 38-05621 Rev . *D Revised June 2, 2008 Features ■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) ■ 300 MHz clock for h[...]

  • Pagina 2

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 2 of 31 Logic Block Diagram (CY7C1316BV18) Logic Block Diagram (CY7C1916BV18) Wri te Reg Wri te Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W Output Logic Reg. Reg. Reg. 8 16 8 NWS [1:0] V REF Write Add. Decod[...]

  • Pagina 3

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 3 of 31 Logic Block Diagram (CY7C1318BV18) Logic Block Diagram (CY7C1320BV18) Wri te Reg Write Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W Output Logic Reg. Reg. Reg. 18 36 18 BWS [1:0] V REF Write Add. Deco[...]

  • Pagina 4

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 4 of 31 Pin Configuration The pin configuration for CY7C1316BV18, CY7C1916 BV18, CY7C1318BV18, and CY7 C1320BV18 follow . [1] 165-Ball FBGA (13 x 15 x 1 .4 mm) Pinout CY7C1316BV18 (2M x 8) 123456789 10 11 A CQ NC/72M A R/W NWS 1 K NC/144M LD A NC/36M CQ B [...]

  • Pagina 5

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 5 of 31 CY7C1318BV18 (1M x 18) 123456789 10 11 A CQ NC/72M A R/W BWS 1 K NC/14 4M LD A NC/36M CQ B NC DQ9 NC A NC/288M K BWS 0 AN C N C D Q 8 C NC NC NC V SS AA 0A V SS NC DQ7 NC D NC NC DQ10 V SS V SS V SS V SS V SS NC NC NC E NC NC DQ1 1 V DDQ V SS V SS [...]

  • Pagina 6

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 6 of 31 Pin Definitions Pin Name IO Pin Descripti on DQ [x:0] Input Output- Synchronous Dat a Input Output S ignals . Inputs are sampled on the rising edge of K and K clocks during valid write operations. These pins dri ve out t he requested data during a [...]

  • Pagina 7

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 7 of 31 CQ Output Clock CQ Referenced with Respect to C . This is a free running clock and is synchronized to the input clock for output data (C) of the DDR-II. In single clock mo de, CQ is generated with resp ect to K. The timing for the echo clocks is sh[...]

  • Pagina 8

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 8 of 31 Functional Overview The CY7C1316BV18, CY7C1916BV18, CY7C1318 BV18, and CY7C1320BV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface. Accesses are initiated on the ri sing edge of the positive input clock (K). All synchronous inp[...]

  • Pagina 9

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 9 of 31 Programmable Impedan ce An external resistor , RQ, must be connected between the ZQ pin on the SRAM and V SS to enabl e the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of th e intended line impedance d riven by [...]

  • Pagina 10

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 10 of 31 T ruth T able The truth table for the CY7C1316BV18, CY7C1 916BV1 8, CY7C1318BV18, and CY7C1320BV18 follows . [2, 3, 4, 5, 6, 7] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edge[...]

  • Pagina 11

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 1 1 of 31 Write Cycle Descriptions The write cycle description tabl e for CY7C1916BV18 follows. [2, 8] BWS 0 K K Comments L L–H – During the data portion of a write sequence, th e single byte (D [8:0] ) is written into the device. L – L–H During th[...]

  • Pagina 12

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 12 of 31 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.1 -1900. The T AP operates using JEDEC standard 1.8V I[...]

  • Pagina 13

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 13 of 31 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister . It a lso places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the T AP controller enters the [...]

  • Pagina 14

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 14 of 31 T AP Controller St ate Diag ram The state diagram for the T AP controller follows. [9] TEST -LOGIC RESET TEST -LOGIC / IDLE SELECT DR-SCAN CAPTURE-DR SHIFT -DR EXIT1-DR P AUSE-DR EXIT2-DR UPDA TE-DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 [...]

  • Pagina 15

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 15 of 31 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.0 mA 1.4 V V OH2 Output HIGH V oltage I OH = − 100 ?[...]

  • Pagina 16

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 16 of 31 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL TCK Clock LOW 20 ns Setup Times t TMSS TMS Setu[...]

  • Pagina 17

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 17 of 31 Identification R egi ster Definitions Instruction Field Va l u e De scription CY7C1316BV18 CY7C1916BV18 CY7 C1318BV18 CY7C1320BV18 Revision Numb er (31:29) 000 000 000 000 V ersion numbe r . Cypress Device ID (28:12) 1 10 10100010000101 1 10101000[...]

  • Pagina 18

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 18 of 31 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 27 1 1H 54 7B 81 3G 1 6P 28 10G 55 6B 82 2G 26 N 2 9 9 G 5 6 6 A 8 3 1 J 3 7P 30 1 1F 57 5B 84 2J 4 7N 31 1 1G 58 5A 85 3K 57 R 3 2 9 F 5 9 4 A 8 6 3 J 6 8R 33 10F 6[...]

  • Pagina 19

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 19 of 31 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialized in a predefined manner to prevent unde fined operations. Power Up Sequence ■ Apply power and drive DO FF either HIGH or LOW (all other inputs can be HIGH or LOW). [...]

  • Pagina 20

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 20 of 31 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature ..................... ............ –65°C to +150°C Ambient T empe r at ur e with Power Appl i ed[...]

  • Pagina 21

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 21 of 31 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200 MHz (x8) 575 mA (x9) 580 (x18) 600 (x36) 635 167 MHz (x8) 490 mA (x9) 490 (x18) 510 (x36) 540 I SB1 Automatic Power Down Current Max V DD , Both Ports Deselected, V [...]

  • Pagina 22

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 22 of 31 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.8V , V DDQ = 1.5V 5 pF C CLK Clock I[...]

  • Pagina 23

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 23 of 31 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consor tium Parameter Description 300 MHz 278 MHz 250 MHz 20 0 MH z 167 MHz Unit Min Max Min Max Min Max Min Max Min Max t POWER V DD (T ypical) to the First Access [22][...]

  • Pagina 24

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 24 of 31 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V alid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.45 – – 0.45 – –0.45 ?[...]

  • Pagina 25

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 25 of 31 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28 ] READ READ READ NOP NOP WRITE WRITE NOP 1 23 4 56 7 8 9 1 0 Q40 t KHCH t CO t t HC t t HA t SD t HD t KHCH t SD t HD DON’ T CARE UNDEFINED t CLZ t DOH t CHZ SC t KH t KHKH[...]

  • Pagina 26

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 26 of 31 Ordering Information Not all of the speed, package, and temper ature ranges are available. Please cont act your local sale s representative or visit www .cypress.com for actual products offered. Spee d (MHz) Ordering Code Package Diagram Package T[...]

  • Pagina 27

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 27 of 31 250 CY7C131 6BV18-250BZC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1916BV18-250BZC CY7C1318BV18-250BZC CY7C1320BV18-250BZC CY7C1316BV18-250BZXC 51-85180 165-Ball F ine Pitch Ball Grid Array (13 x 15 x 1.4 mm) [...]

  • Pagina 28

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 28 of 31 167 CY7C131 6BV18-167BZC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1916BV18-167BZC CY7C1318BV18-167BZC CY7C1320BV18-167BZC CY7C1316BV18-167BZXC 51-85180 165-Ball F ine Pitch Ball Grid Array (13 x 15 x 1.4 mm) [...]

  • Pagina 29

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 29 of 31 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0.05 0.25 C 0.15 C PIN 1 CORNER TOP VIEW BO[...]

  • Pagina 30

    CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320BV18 Document Number: 38-05621 Rev . *D Page 30 of 31 Document History Page Document Title: CY7C1316BV18/CY7C1916BV18/CY7C1318BV1 8/CY7C132 0BV18 , 18-Mbit DDR-II SRAM 2-Word Burst Ar- chitecture Document Number: 38-05621 Rev . ECN No. Submission Date Orig, o f Change Description of Chan ge ** 252474[...]

  • Pagina 31

    Document Number: 38-05621 Rev . *D Revised June 2, 2008 Page 31 of 31 DDR RAMs and QDR RAMs comprise a new fam ily of products develope d by Cypress, Hitachi, IDT , Micron, NEC, a nd Samsung. All p rodu ct and company names mentione d in this document are the trademarks of the ir respective holders. CY7C1316BV18, CY7C1916BV18 CY7C1318BV18, CY7C1320[...]