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A good user manual
The rules should oblige the seller to give the purchaser an operating instrucion of Cypress Semiconductor CY62157ESL, along with an item. The lack of an instruction or false information given to customer shall constitute grounds to apply for a complaint because of nonconformity of goods with the contract. In accordance with the law, a customer can receive an instruction in non-paper form; lately graphic and electronic forms of the manuals, as well as instructional videos have been majorly used. A necessary precondition for this is the unmistakable, legible character of an instruction.
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Table of contents for the manual
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Page 1
CY62157ESL MoBL ® 8-Mbit (512K x 16) S tatic RAM Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-43141 Rev . ** Revised January 04, 2008 Features ■ V ery high speed: 45 ns ■ Wide voltage range: 2.2V–3.6V and 4.5V –5.5V ■ Ultra low standby power ❐ T ypical St andb y[...]
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Page 2
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 2 of 12 Pin Configuration Figure 1. 44-Pin TSOP II (T op View) Product Port folio Product Range V CC Range (V) [1] S peed (ns) Power Dissip ation Operating I CC , (mA) Stan db y , I SB2 ( μ A) f = 1MHz f = f max Ty p [2] Max Ty p [2] Max Ty p [2] Max CY62157ESL Industrial 2.2V–3.6V and 4.5V?[...]
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Page 3
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 3 of 12 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ................. .............. ... –65°C to +150°C Ambient T emperatur e with Power Applied .... ................. ... ..... .......[...]
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Page 4
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 4 of 12 Cap acit ance T ested initially and after any design or proce ss changes that may affect these parameters. Parameter Description T est Conditio ns Max Unit C IN Input Capacitance T A = 25°C, f = 1 MHz, V CC = V CC( typ) 10 pF C OUT Output Capacit ance 10 pF Thermal Resist an ce T ested[...]
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Page 5
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 5 of 12 Dat a Retentio n Characteristics Over the Operating Range Parameter Description Conditions Min Ty p [2] Max Unit V DR V CC for Dat a Retention 1.5 V I CCDR Data Retention Current CE > V CC – 0.2V , V IN > V CC – 0.2V or V IN < 0.2V V CC = 1.5V 2 5 μ A V CC = 2.0V 2 8 t CDR[...]
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Page 6
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 6 of 12 Switching Characteristics Over the Operating Range [9] Parameter Description 45 ns Unit Min Max Read Cycle t RC Read Cycle T ime 45 ns t AA Address to Data V alid 45 ns t OHA Data Hold from Address Change 10 ns t ACE CE LOW to Data V alid 45 ns t DOE OE LOW to Data V alid 22 ns t LZOE O[...]
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Page 7
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 7 of 12 Switching W aveforms Figure 2. Read Cycle No.1: Address T ransition Controlled . [14, 15] Figure 3. Read Cycle No. 2: OE Controlled [15, 16] PREVIOUS DATA VALID DATA VALID RC t AA t OHA t RC ADDRESS DATA OUT 50% 50% DATA VALID t RC t ACE t LZBE t LZCE t PU HIGH IMPEDANCE I CC t HZOE t H[...]
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Page 8
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 8 of 12 Figure 4. Write Cycle No 1: WE Controlled [1 3, 17, 18] Figure 5. Write Cycle 2: CE Cont ro lled [13, 17, 18] Switching W aveforms (con tinued) t HD t SD t PWE t SA t HA t AW t WC t HZOE DATA IN NOTE 19 t BW t SCE DATA IO ADDRESS CE WE OE BHE /BLE t HD t SD t PWE t HA t AW t SCE t WC t [...]
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Page 9
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 9 of 12 Figure 6. Write Cycle 3: WE control led, OE LOW [1 8] Figure 7. Write Cycle 4: BHE /BLE Controlled, OE LOW [18] Switching W aveforms (con tinued) DATA IN t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW NOTE 19 CE ADDRESS WE DATA IO BHE /BLE t HD t SD t SA t HA t AW t WC DAT[...]
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Page 10
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 10 of 12 T ruth T able CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High-Z Deselect/Power down S tandby (I SB ) X X X H H High-Z Deselect/Power down S tandby (I SB ) L H L L L Data Out (IO 0 –IO 15 )R e a d A c t i v e ( I CC ) LHLHL D a t a O u t ( I O 0 –IO 7 ); IO 8 –IO 15 in H[...]
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Page 11
CY62157ESL MoBL ® Document #: 001-43141 Rev . ** Page 1 1 of 12 Package Diagrams Figure 8. 44-Pin TSOP II, 51-85087 51-85087-* A [+] Feedback [+] Feedback[...]
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Page 12
Document #: 001-43141 Rev . ** Revised January 04, 2008 Page 12 of 12 MoBL is a reg istered trademar k and More Batt ery Life is a trad emark of Cypre ss Semiconducto r . All product and compan y names men tioned in this documen t are the trad emarks of th eir respectiv e holders. CY62157ESL MoBL ® © Cypress Semico nductor Corp oration, 200 8. Th[...]