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Cypress Semiconductor CY7C1297H manual

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Table of contents for the manual

  • Page 1

    CY7C1297H 1-Mbit (64K x 18) Flow-Through Sync SRAM Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 38-05669 Rev . *B Revised July 6, 2006 Features • 64K x 18 common I/O • 3.3V core power supply (V DD ) • 2.5V/3.3V I/O power supply (V DDQ ) • Fast clock-to-output times ?[...]

  • Page 2

    CY7C1297H Document #: 38-05669 Rev . *B Page 2 of 15 Selection Guide 133 MHz 100 MHz Unit Maximum Access T i me 6.5 8.0 ns Maximum Operating Current 225 205 mA Maximum S tandby Cu rrent 40 40 mA Pin Configuration 100-Pin TQFP A A A A A 1 A 0 NC/72M NC/36M V SS V DD NC/9M A A A A A NC/4M A NC V DDQ V SS NC DQP A DQ A DQ A V SS V DDQ DQ A DQ A V SS N[...]

  • Page 3

    CY7C1297H Document #: 38-05669 Rev . *B Page 3 of 15 Pin Descriptions Name I/O Description A0, A1, A Input- Synchronous Address Inputs used to select one of the 64K address locations . Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW , and CE 1 , CE 2 , and CE 3 are sampled active. A [1:0] feed the 2-bi t co un te r . BW A , BW B[...]

  • Page 4

    CY7C1297H Document #: 38-05669 Rev . *B Page 4 of 15 Functional Overview All synchronous inputs pass through input registers controlled by the rising edge o f the clock. Maximum access delay from the clock rise (t CDV ) is 6.5 ns (133-MHz device). The CY7C1297H supports secondary cache in systems utilizing either a linear or interleaved burst sequ [...]

  • Page 5

    CY7C1297H Document #: 38-05669 Rev . *B Page 5 of 15 ZZ Mode Electrical Characteristics Parameter Description T est Conditions Min. Max. Unit I DDZZ Sleep mode standby current ZZ > V DD – 0.2V 40 mA t ZZS Device operation to ZZ ZZ > V DD – 0.2V 2t CYC ns t ZZREC ZZ recovery time ZZ < 0.2V 2t CYC ns t ZZI ZZ Active to sleep current T hi[...]

  • Page 6

    CY7C1297H Document #: 38-05669 Rev . *B Page 6 of 15 T ruth T able for Read/W rite [2, 3] Function GW BWE BW B BW A Read H H X X Read H L H H Write Byte (A, DQP A )H L H L Write Byte (B, DQP B )H L L H Write All Bytes H L L L Write All Bytes L X X X [+] Feedback[...]

  • Page 7

    CY7C1297H Document #: 38-05669 Rev . *B Page 7 of 15 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. ... ... ... ... ....... –65 ° C to + 150 ° C Ambient T e mperature with Power Applied .............. ... ... ........... ... ... .. ..... –55 ° C to + 125 ?[...]

  • Page 8

    CY7C1297H Document #: 38-05669 Rev . *B Page 8 of 15 Cap acit ance [9] Parameter Description T est Conditions 100 TQFP Max. Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 3.3V . V DDQ = 2.5V 5p F C CLK Clock Input Ca pacit ance 5 pF C I/O Input/Output Capacitance 5 pF Thermal Resist ance [9] Parameter Description T est Conditions 100 [...]

  • Page 9

    CY7C1297H Document #: 38-05669 Rev . *B Page 9 of 15 Switching Characteristics Over the Operating Range [10, 1 1] Parameter Description 133 MHz 100 MHz Unit Min. Max. Min. Max. t POWER V DD (T ypical) to the First Access [12] 11 m s Clock t CYC Clock Cycle Time 7.5 10.0 ns t CH Clock HIGH 2.5 4.0 ns t CL Clock LOW 2.5 4.0 ns Output Times t CDV Dat [...]

  • Page 10

    CY7C1297H Document #: 38-05669 Rev . *B Page 10 of 15 Timing Diagrams Read Cycle Timing [16] Note: 16. On this diagram, when CE is LOW, CE 1 is LOW, CE 2 is HIGH and CE 3 is LOW . When CE is HIGH, CE 1 is HIGH or CE 2 is LO W or CE 3 is HIGH. t CYC t CL CLK t ADH t ADS ADDRESS t CH t AH t AS A1 t CEH t CES Data Out (Q) High-Z t CLZ t DOH t CDV t OE[...]

  • Page 11

    CY7C1297H Document #: 38-05669 Rev . *B Page 1 1 of 15 Write Cycle Timing [16, 17] Note: 17. Full width W rite can be initiated by eith er GW LOW ; or by GW HIGH, BWE LOW and BW [A:B] LOW . Timing Diagrams (continued) t CYC t CL CLK t ADH t ADS ADDRESS t CH t AH t AS A1 t CEH t CES High-Z BURST READ BURST WRITE D(A2) D(A2 + 1) D(A2 + 1) D(A1) D(A3)[...]

  • Page 12

    CY7C1297H Document #: 38-05669 Rev . *B Page 12 of 15 Read/W rite Timing [16, 18, 19] Notes: 18. The data bus (Q) remains in High-Z following a Write cycle unless an ADSP , ADSC , or ADV cycle is performed. 19. GW is HIGH. Timing Diagrams (continued) t CYC t CL CLK t ADH t ADS ADDRESS t CH t AH t AS A2 t CEH t CES Single WRITE D(A3) A3 A4 BURST REA[...]

  • Page 13

    CY7C1297H Document #: 38-05669 Rev . *B Page 13 of 15 ZZ Mode Timing [20, 21] Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all po ssible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Timing Diagrams (continued) t ZZ I SUPPLY CLK ZZ t ZZREC A LL INPUTS (exc[...]

  • Page 14

    CY7C1297H Document #: 38-05669 Rev . *B Page 14 of 15 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no resp onsibility f or the u se of any circuitry o ther than circui try embodied i n a Cypress prod uct. Nor do[...]

  • Page 15

    CY7C1297H Document #: 38-05669 Rev . *B Page 15 of 15 Document History Document Title: CY7C1297H 1-Mbit (64K x 18) Flow-Through Sync SRAM Document Number: 38 -05669 REV . ECN NO. Issue Date Orig . of Change Description of Change ** 345879 See ECN PCI New Data Sheet *A 430677 See ECN NXR Chan ged address of Cypress Se miconductor Corporation on Page[...]