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Cypress 7C185-20 manual

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Table of contents for the manual

  • Page 1

    8K x 8 S tatic RAM CY7C185 Cypress Semicondu ctor Corporatio n • 3901 North Fi rst S treet • San Jo se • CA 95134 • 408-943-26 00 Document #: 38-0504 3 Rev . *A Revi sed Septembe r 13, 2002 185 Features • High sp eed —1 5 n s •F a s t t DOE • Low active pow er — 715 mW • Low st an dby power — 220 mW • CMOS for optimum sp eed[...]

  • Page 2

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 2 of 1 1 Maximum Ratings (Abo ve wh ich th e use ful l ife may be i mpair ed. F or use r gui de- lines, not tes ted .) S torage T emp erature ............ ........... .......... – 65 ° C to +150 ° C Ambient T emperat ure with Power Appli ed ............. ................. ........... .... – 55 ° C[...]

  • Page 3

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 3 of 1 1 Electrica l Characteristics O ver the O perating Ra nge (conti nued) 7C185-25 7C18 5-35 Parameter De sc ript ion T est Conditions Min. Max. Min. Ma x. Uni t V OH Output HIGH V oltage V CC = Min., I OH = – 4.0 mA 2.4 2.4 V V OL Output LOW V olt age V CC = Min., I OL = 8. 0 mA 0.4 0.4 V V IH Inp[...]

  • Page 4

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 4 of 1 1 Switching Char acteristics Over the O perating Range [6] 7C185-1 5 7C185-20 7C 185-25 7C185 -35 Parameter D escription Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle t RC Read Cyc le T ime 15 20 25 35 ns t AA Address to Data V alid 15 20 25 35 ns t OHA Data Hold from Addres s Change 3 5[...]

  • Page 5

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 5 of 1 1 Switching W aveforms 10. Device is con tinuously selected. OE , CE 1 = V IL . CE 2 = V IH . 11 . W E is HIGH for rea d cycle. 12. Dat a I/O is Hig h Z if O E = V IH , CE 1 = V IH , W E = V IL , or CE 2 =V IL . 13. The intern al write time o f the mem ory is d efined by the ove rlap o f CE 1 LOW [...]

  • Page 6

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 6 of 1 1 Notes: 15. The min imum write c ycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t HZWE and t SD . 16. If CE 1 goes HIGH or CE 2 goes LOW si multaneousl y with WE H IGH, the ou tput re mains in a high-i mpedance state. Switching W aveforms (con tinued) t WC t AW t SA t HA t HD [...]

  • Page 7

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 7 of 1 1 T ypical DC and AC Cha racteristics – 55 25 125 1.2 1.0 0.8 OUTPUT SOURCE CURRENT (mA) AMBI EN T TE MPERA TURE ( ° C) 0.6 0.4 0.2 0.0 NORMALIZED I, I CC I SB V CC =5. 0V V IN =5.0V I CC SB 1.2 1.4 1.0 0.6 0.4 0.2 4.0 4.5 5.0 5.5 6.0 1.6 1.4 1.2 1.0 0.8 – 55 25 125 NORMALIZED t AA 120 100 80[...]

  • Page 8

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 8 of 1 1 T ruth T able CE 1 CE 2 WE OE Input/Output Mode H X X X High Z Deselect/Power-Down X L X X High Z Deselect/Power-Down L H H L Dat a Out Read L H L X Dat a In Wri t e L H H H High Z Desel ect Address Designat ors Address Name Addr ess Function Pin Number A4 X3 2 A5 X4 3 A6 X5 4 A7 X6 5 A8 X7 6 A9[...]

  • Page 9

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 9 of 1 1 Package Diagrams 51-85014-* B 28-Lead ( 300-Mil) Mo lded DIP P21 28-Lead (30 0-Mil) Molde d SOIC S21 51-85026-*A[...]

  • Page 10

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 10 of 1 1 © Cypress Semico nductor Corporati on, 2002. The information cont ained herein is su bject to change witho ut notice. Cypress S emico nductor Cor poration assumes no r esponsibility for the use of any ci rcuitry other th an circuitry embod ied in a Cypr ess Semiconductor pr oduct. Nor does it [...]

  • Page 11

    CY7C185 Docum ent #: 38 -05043 Rev . *A Page 1 1 of 1 1 Document Histor y Page Documen t Title: C Y7C185 8K x 8 S t atic RAM Documen t Number: 3 8-05043 REV . ECN NO. Issue Date Orig. o f Change Description of Ch ange ** 107145 09/10/01 SZV Change from Spec numbe r: 38-00037 to 38-0504 3 *A 1 16470 09/16/02 CEA Add appli cations f oot not e to dat [...]