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Table of contents for the manual
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Page 1
2-Mbit (128K x 16) S t atic RAM CY62137EV30 MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-9 43-2600 Document #: 38-05443 Rev . *B Revised February 14, 2006 Features • V ery high speed: 45 ns • Wide volt age range: 2.20V–3.6 0V • Pin-compatible with CY62137CV30 • Ultra-low st andby [...]
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Page 2
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 2 of 12 Pin Configurations [2, 3 ] VFBGA (T op View) 44 TSOP II (T op View) Product Port folio Product V CC Range (V) Spee d (ns) Power Dissipation Operating I CC (mA) St andb y I SB2 ( µ A) f = 1MHz f = f max Min. T yp. [7] Max. T yp. [7] Max. T yp. [7] Max. T yp. [7] Ma x. CY62137EV30-45LL 2[...]
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Page 3
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 3 of 12 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. .............. ..... –65°C to + 150°C Ambient T emperature with Power Applied .......... ............................ ..... –55°C to + 125°C Supp[...]
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Page 4
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 4 of 12 Cap acitance (for all packages) [8] Parameter Description T es t Conditions Max. Unit C IN Input Capacitance T A = 25°C, f = 1 MHz, V CC = V CC(typ) 10 pF C OUT Output Capacitance 10 pF Thermal Resist ance Parameter Description T est Co nd itions BGA TSOP II Unit Θ JA Thermal Resistan[...]
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Page 5
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 5 of 12 Switching Characteristics Over the Operating Range [1 1] Parameter Description 45 ns Unit Min. Max. Read Cycle t RC Read Cycle T ime 45 ns t AA Address to Data V alid 45 ns t OHA Data Hold from Address Change 10 ns t ACE CE LOW to Dat a V alid 45 ns t DOE OE LOW to Dat a V alid 22 ns t [...]
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Page 6
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 6 of 12 Switching W aveforms Read Cycle 1 (Add ress T ransitio n Controlled) [15, 16] Read Cycle No. 2 (OE Controlled) [16, 17] Notes: 15. The device is contin uously selected . OE , CE = V IL , BH E and/or BLE = V IL . 16. WE is HIGH for read cycle. 17. Address valid pr ior to or coincident wi[...]
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Page 7
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 7 of 12 Write Cycle No. 1 (WE Controlled) [14, 18, 19] Write Cycle No. 2 (CE Controlled) [14, 18, 19] Notes: 18. Data I/O is high impedance if OE = V IH . 19. If CE goes HIGH simulta neou sly with WE = V IH , the output remains in a high-impedance state. 20. During this period, the I/Os are in [...]
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Page 8
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 8 of 12 Write Cycle No. 3 (WE Controlled, OE LOW) [19] Write Cycle No. 4 (BHE /BLE Controlled, OE LOW) [19] Switching W aveforms (continued) DATA IN t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE CE ADDRESS WE DATA I/O NOTE 20 t BW BHE /BLE DATA I/O ADDRESS t SD t SA t HA t AW t WC CE [...]
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Page 9
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 9 of 12 T ruth T able CE WE OE BHE BLE Inputs/Outputs Mode Power H X X X X High Z Deselect/Power-down S tandby (I SB ) X X X H H High Z Deselect/Power-d own S tandby (I SB ) L H L L L Data Out (I/O O –I/O 15 ) Read Active (I CC ) L H L H L Data Out (I/O O –I/O 7 ); I/O 8 –I/O 15 in High Z[...]
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Page 10
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 10 of 12 Package Diagrams A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX. 0.25 C 0.10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3.75 5.25 B C D E F G H 65 46 5 23 1 D H F G E C B A 6.00±0.10 8.00±0.10 A 8.00±0.10 6.0[...]
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Page 11
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 1 1 of 12 © Cypress Semi con duct or Cor po rati on , 20 06 . The information contained he re i n is su bj ect to ch an ge wi t hou t n oti ce. C ypr ess S em ic onduct or Corporation assumes no responsibility for the use of any circuitry o ther than circuitry embodied i n a Cypress prod uct. [...]
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Page 12
CY62137EV30 MoBL ® Document #: 38-05443 Rev . *B Page 12 of 12 Document History Page Document Title: CY62137EV30 MoBL ® 2-Mbit (128K x 16) Static RAM Document Number: 38-05443 REV . ECN NO. Issue Date Orig. of Change Description of Change ** 203720 See ECN AJU New Data Sheet *A 234 196 See ECN AJU Changed I CC MAX at f=1MHz from 1.7 mA to 2.0 mA [...]