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Cypress CY62138F manual

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Table of contents for the manual

  • Page 1

    Cypress Semic onductor Corpora tion • 198 Champion Court • San Jose , CA 95134-17 09 • 408-94 3-2600 Document #: 001-13194 Rev . *A Revised March 26, 2007 CY62138F MoBL ® 2-Mbit (256K x 8) S t atic RAM Features • High speed: 45 ns • Wide voltage range: 4.5 V – 5.5 V • Pin compatible with CY62138V • Ultra low standby power — T ypi[...]

  • Page 2

    Document #: 001-13194 Rev . *A Page 2 of 10 CY62138F MoBL ® Pin Configuration [2] Product Port folio Product V CC Range (V) Speed (ns) Power Dissip ation Operating I CC (mA) Sta nd b y I SB2 ( µ A) f = 1MHz f = f max Min T yp [3] Max T yp [3] Max T yp [3] Max T yp [3] Max CY62138FLL 4.5V 5.0V 5.5V 45 1.6 2.5 13 18 1 5 1 2 3 4 5 6 7 8 9 10 11 14 3[...]

  • Page 3

    Document #: 001-13194 Rev . *A Page 3 of 10 CY62138F MoBL ® Maximum Ratings Exceeding maximum ratings may im p air the useful life of the device. These user guidelines are not teste d. S torage T emperature .............. ................. . –65°C to + 150°C Ambient T emperatur e with Power Applied ....................... ........ ............[...]

  • Page 4

    Document #: 001-13194 Rev . *A Page 4 of 10 CY62138F MoBL ® AC T est Loads and W aveforms Parameters 5.0V Unit R1 1800 Ω R2 990 Ω R TH 639 Ω V TH 1.77 V Dat a Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min T yp [3] Max Unit V DR V CC for Data Retention 2.0 V I CCDR [7] Data Retention Current V CC = [...]

  • Page 5

    Document #: 001-13194 Rev . *A Page 5 of 10 CY62138F MoBL ® Switching Characteristics (Over the Operating Range) [1 1] Parameter Descriptio n 45 ns Unit Min Max Read Cycle t RC Read Cycle T ime 45 ns t AA Address to Data V alid 45 ns t OHA Data Hold from Address Ch ange 10 ns t ACE CE 1 LOW an d CE 2 HIGH to D ata V alid 45 ns t DOE OE LOW to Data[...]

  • Page 6

    Document #: 001-13194 Rev . *A Page 6 of 10 CY62138F MoBL ® Switching W aveforms Read Cycle 1 (Address transition controlled) [15, 16] Read Cycle No. 2 (OE controlled) [10, 16 , 17] Write Cycl e No. 1 (WE controlled) [10, 14, 18, 19] PREVIOUS DATA VALID DATA VALID RC t AA t OHA t RC ADDRESS DATA OUT 50% 50% DA T A V ALID t RC t ACE t DOE t LZOE t [...]

  • Page 7

    Document #: 001-13194 Rev . *A Page 7 of 10 CY62138F MoBL ® Write Cycl e No. 2 (CE1 or CE2 controlled) [10, 14, 18, 19] Write Cycl e No. 3 (WE controlled, OE LOW) [10, 19] T ruth T able CE WE OE Input s/Output s Mode Power H X X High Z Deselect/Power Down S tandby (I SB ) L H L Data Out Rea d Active (I CC ) L L X Data In Write Active (I CC ) L H H[...]

  • Page 8

    Document #: 001-13194 Rev . *A Page 8 of 10 CY62138F MoBL ® Package Diagrams Figure 1. 32-pin (450 Mil) Molded SOIC, 51-85081 0.546[13.868] 0.440[11.176] 0.101[2.565] 0.050[1.270] 0.014[0.355] 0.118[2.997] 0.004[0.102] 0.047[1.193] 0.006[0.152] 0.023[0.584] 0.793[20.142] 0.450[11.430] 0.566[14.376] 0.111[2.819] 0.817[20.751] BSC. 0.020[0.508] MIN.[...]

  • Page 9

    Document #: 001-13194 Rev . *A Page 9 of 10 © Cypress Semico nductor Corpor ation, 2007. The information cont ained herein is subject to ch ange without not i ce. Cypress Semi co nductor Corpor ation assumes no responsib ility for the use of any circuitr y other than cir cuitry embodi ed in a Cypress product. Nor does it convey o r imply any l ice[...]

  • Page 10

    Document #: 001-13194 Rev . *A Page 10 of 10 CY62138F MoBL ® Document History Page Document Title: CY62138F MoBL ® 2-Mbit (256K x 8) St atic RAM Document Number: 001-13194 REV . ECN NO. Issue Date Orig. of Change Description of Chan ge ** 797956 See ECN VKN New Data Sheet *A 940341 See ECN VKN Added footnote #7 related to I SB2 and I CC DR [+] Fe[...]