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Cypress CY62147EV30 manual

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Table of contents for the manual

  • Page 1

    CY62147EV30 MoBL ® 4-Mbit (256K x 16) S t atic RAM Cypress Semiconducto r Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 38-05440 Rev . *G Revised Marc h 31, 200 9 Features ■ V ery high speed: 45 ns ■ T emperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Au[...]

  • Page 2

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 2 of 13 Pin Configuration Figure 1. 48-Ball VFBGA (Single Chip Enable) [3, 4] Figure 2. 48-Ball VFBGA (Dua l Ch ip Enable) [3, 4] Figure 3. 44-Pin TS OP II [3] Product Port folio Product Range V CC Range (V) Spe e d (ns) Power Dissipation Operating I CC (mA) Standb y I SB2 ( μ A) f = 1 MHz f =[...]

  • Page 3

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 3 of 13 Maximum Ratin gs Exceeding the maximum rating s may impair t he useful lif e of the device. User gui d elines are no t te ste d . S torage T emperature ............. .............. ..... –65°C to + 150°C Ambient T emperature with Power Applied ......... ............................ [...]

  • Page 4

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 4 of 13 Thermal Resist ance [9] Parameter Description T est Conditions VFBGA Package TSOP II Package Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , soldered on a 3 × 4.5 inch, two-layer printed circuit board 75 77 ° C/W Θ JC Thermal Resistance (Junction to Case) 10 13 ° C/[...]

  • Page 5

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 5 of 13 Switching Characteristics Over the Operating Range [12, 13] Parameter Description 45 ns (Ind’l/Auto-A) 55 ns (Auto- E) Unit Min Max Min Max Read Cycle t RC Read Cycle Time 45 55 ns t AA Address to Data V alid 45 55 ns t OHA Data Hold from Address Change 10 10 ns t ACE CE LOW to Data V[...]

  • Page 6

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 6 of 13 Switching W aveforms Figure 6. Read Cycle No. 1 (Address T ransition Controlled) [17, 18] Figure 7. Read Cycle No. 2 (OE Controlled) [1, 18, 19] PREVIOUS DA T A V ALID DA T A V ALID t RC t AA t OHA ADDRESS DA T A OUT 50% 50% DATA VALID t RC t ACE t LZBE t LZCE t PU HIGH IMPEDANCE I CC t[...]

  • Page 7

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 7 of 13 Figure 8. Write Cycle No. 1 (WE Controlled) [1, 16, 20, 21] Figure 9. Write Cycle No. 2 (CE Controlled) [1, 16, 2 0, 21] Switching W aveforms (continued) t HD t SD t PWE t SA t HA t AW t WC t HZOE DATA IN NOTE 22 t BW t SCE DATA IO ADDRESS CE WE OE BHE /BLE t HD t SD t PWE t HA t AW t S[...]

  • Page 8

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 8 of 13 Figure 10 . Write Cycle No. 3 (WE Controlled, O E LOW) [1, 21] Figure 1 1. Write Cycle No. 4 (BHE /BLE Controlled, OE LOW) [1, 21] Switching W aveforms (continued) DATA IN t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW NOTE 22 CE ADDRESS WE DATA IO BHE /BLE t HD t SD t SA [...]

  • Page 9

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 9 of 13 T ruth T able CE [ 1 ] WE OE BHE BLE IOs Mode Power H X X X X High Z Deselect/Power Down St andby (I SB ) L X X H H High Z Deselect/Power Down St andby (I SB ) L H L L L Data Out (IO 0 –IO 15 ) Rea d Activ e (I CC ) L H L H L Data Out (IO 0 –IO 7 ); IO 8 –IO 15 in High Z Read Acti[...]

  • Page 10

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 10 of 13 Package Diagrams Figure 12. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150 A 1 A1 CORNER 0.75 0.75 Ø0.30±0.05(48X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.21±0.05 1.00 MAX C SEATING PLANE 0.55 MAX. 0.25 C 0.10 C A1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 3.75 5.25 B C D E F G H 65 46 5 23 1 D H [...]

  • Page 11

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 1 1 of 13 Figure 13. 44-Pin TSOP II, 51-85087 Package Diagrams (continued) 51-85087-*A [+] Feedback[...]

  • Page 12

    CY62147EV30 MoBL ® Document #: 38-05440 Rev . *G Page 12 of 13 Document History Page Document Title: CY62147EV30 MoBL ® 4-Mbit (256K x 16) St atic RAM Document Number: 38-05440 Rev . ECN No. Or ig. of Change Submission Date Description of Chang e ** 201861 AJU 01/13/04 New Data Sheet *A 247009 SYT See ECN Change d from Advanced Informatio n to Pr[...]

  • Page 13

    Document #: 38-05440 Rev . *G Revised March 31, 2009 Page 13 of 13 MoBL is a regist ered trademark, and More Battery Lif e is a trademark o f Cypress Semiconductor . All product and comp any names mentioned in this document are the trademarks of their respective holders. CY62147EV30 MoBL ® © Cypress Semicondu ctor Corpor ation, 2007-200 9. The in[...]