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Table of contents for the manual
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Page 1
16-Mbit (1M x 16) S t atic RAM CY62167DV18 MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Court • San J ose , CA 95134-1709 • 408-943-2600 Document #: 38-05326 Rev . *C Revised April 25, 2007 Features • V ery high speed: 55 ns • Wide voltage range: 1.65V–1.9 5V • Ultra low active power — T ypical acti ve current: 1.5 mA @[...]
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Page 2
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 2 of 1 1 Product Port folio Product V CC Range (V) Speed (ns) Power Dissip ation Operating I CC (mA) St a nd by I SB2 (µA) f = 1MHz f = f max Min T yp [2] Max T yp [2] Max T yp [2] Max T yp [2] Max CY62167DV18LL 1.65 1.8 1.95 55 1.5 5 15 30 2.5 20 Pin Configuration [3] Notes 2. T ypical values[...]
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Page 3
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 3 of 1 1 Maximum Ratings Exceeding the maximum rati ngs may impair the useful life of the device. The se user guid elines are no t tested. S torage T emperature ............. .............. ...... –65°C to +150°C Ambient T emperature with Power Applied ........... ..........................[...]
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Page 4
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 4 of 1 1 Thermal Resist ance [7] Parameter Description T est Co nditions VFBGA Unit Θ JA Thermal Resistance (Junction to Ambient) S till Ai r , soldered on a 3 × 4.5 inch , two-layer printed circu it board 55 ° C/W Θ JC Thermal Resistance (Junction to Case) 16 ° C/W AC T est Loads and W av[...]
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Page 5
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 5 of 1 1 Switching Characteristics (Over the Operating Range) [10] Parameter Description 55 ns Unit Min Max Read Cycle t RC Read Cycle Time 55 ns t AA Address to Data V al id 55 ns t OHA Data Hold from Address Change 10 ns t ACE CE 1 LOW and CE 2 HIGH to Dat a V alid 55 ns t DOE OE LOW to Data [...]
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Page 6
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 6 of 1 1 Switching W aveforms Read Cycle 1 (Address T ransition Controlled) [14, 15] Read Cycle 2 (OE Controlled) [15, 16] PREVIOUS DATA VALID DATA VALID RC t AA t OHA t RC ADDRESS DATA OUT 50% 50% DA T A V ALID t RC t ACE t DOE t LZOE t LZCE t PU HIGH IMPEDANCE t HZOE t PD t HZBE t LZBE t HZCE[...]
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Page 7
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 7 of 1 1 Write Cycle 1 (WE Controlled) [13, 17, 18] Write Cycle 2 (CE 1 or CE 2 Controlled) [13, 17, 18 ] Switching W aveforms (continued) t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE VA L I D D ATA t BW NOTE 19 CE 1 ADDRESS CE 2 WE DA T A IO OE BHE /BLE t HD t SD t PWE t HA t AW t SCE t WC[...]
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Page 8
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 8 of 1 1 Write Cycle 3 (WE Controlled, OE LOW) [18] Write Cycle 4 (BHE /BLE Controlled, OE LOW) [18] Switching W aveforms (continued) VA L I D D ATA t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE t BW NOTE 19 CE 1 ADDRESS CE 2 WE DA T A IO BHE /BLE t HD t SD t SA t HA t AW t WC VA L I [...]
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Page 9
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 9 of 1 1 T ruth T able CE 1 CE 2 WE OE BHE BLE Inputs/Outputs Mode Power H X X X X X High Z Deselect/Power Down S tandby (I SB ) X L X X X X High Z Deselect/Power Down S tandby (I SB ) X X X X H H High Z Deselect/Power Down S tandby (I SB ) L H H L L L Data Out (IO 0 –IO 15 ) Read Active (I C[...]
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Page 10
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 10 of 1 1 © Cypress Semico nductor Corp oration, 200 2-2007. The inform ation cont ained herein is subject to chang e without notice. C ypress S emicond uctor Corpora tion assumes no resp onsibility for th e use of any circuitr y other than circui try embodied in a Cy press product. Nor does i[...]
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Page 11
CY62167DV18 MoBL ® Document #: 38-05326 Rev . *C Page 1 1 of 1 1 Document History Page Document Title: CY62167DV18 MoBL ® , 16-Mbit (1M x 16) St atic RAM Document Number: 38-05326 REV . ECN NO. Issue Date Orig. of Change Description of Change ** 1 18406 09/30/02 GUG New Data Sheet *A 123690 02/1 1/03 DPM Changed Advan ce to Preliminary Added pack[...]