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Cypress CY7C1019BN manual

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Table of contents for the manual

  • Page 1

    128K x 8 S t atic RAM CY7C1019BN Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 001-06425 Rev . ** Revised February 1, 2006 Features •H i g h s p e e d —t AA = 12, 15 ns • CMOS for optimum speed/powe r • Center pow er/ground pinout • Automatic po wer-down w hen desele[...]

  • Page 2

    CY7C1019BN Document #: 001-06425 Rev . ** Page 2 of 8 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. .............. ...... –65°C to +150°C Ambient T emperature with Power Applied ........... ............................ ...... –55°C to +125°C Supply V olt[...]

  • Page 3

    CY7C1019BN Document #: 001-06425 Rev . ** Page 3 of 8 AC T est Loads and W aveforms Switching Characteristics [4] Over the Operating Range Parameter Description -12 -15 Unit Min. Max. Min. Max. Read Cycle t RC Read Cycle T ime 12 15 ns t AA Address to Data V alid 12 15 ns t OHA Data Hold from Address Change 3 3 ns t ACE CE LOW to Data V alid 12 15 [...]

  • Page 4

    CY7C1019BN Document #: 001-06425 Rev . ** Page 4 of 8 Dat a Retention Characteristics Over the Operating Range (L V ersion Only) Parameter Description Conditions Min. Max. Unit V DR V CC for Data Retention No input may exceed V CC + 0.5V V CC = V DR = 2.0V , CE > V CC – 0.3V , V IN > V CC – 0.3V or V IN < 0.3V 2.0 V I CCDR Data Retenti[...]

  • Page 5

    CY7C1019BN Document #: 001-06425 Rev . ** Page 5 of 8 Write Cycle No. 1 (CE Controlled) [12, 13] Write Cycle No. 2 (WE Controlled, OE HI GH During Write) [12, 13] Notes: 12. Data I /O is high impedance if OE = V IH . 13. If CE goes HIGH simult aneously with WE going HIGH, the out put remains in a high-impedance st ate. 14. During this period the I/[...]

  • Page 6

    CY7C1019BN Document #: 001-06425 Rev . ** Page 6 of 8 Write Cycle No. 3 (WE Controlled, OE LOW) [13] Switching W aveforms (continued) DATA VALID t HD t SD t LZWE t PWE t SA t HA t AW t SCE t WC t HZWE CE ADDRESS WE DATA I/O NOTE 14 T ruth T able CE OE WE I/O 0 –I/O 7 Mode Power H X X High Z Power-Down S tandby (I SB ) L L H Data Out Read Active ([...]

  • Page 7

    CY7C1019BN Document #: 001-06425 Rev . ** Page 7 of 8 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wit hout notice. C ypr ess S em ic on duct or Corporation assumes no resp onsib ility for the u se of any circuitry o ther than circui try embodied in a Cypress prod uct. Nor does i[...]

  • Page 8

    CY7C1019BN Document #: 001-06425 Rev . ** Page 8 of 8 Document History Page Document Title: CY7C1019BN 128K x 8 St atic RAM Document Number: 00 1-06425 REV . ECN NO. Issue Date Orig. of Change Description of Change ** 423847 See ECN NXR New Da ta Sheet [+] Feedback[...]