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Cypress CY7C1156V18 manual

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Table of contents for the manual

  • Page 1

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 18-Mbit QDR™-II+ SRAM 4-W ord Burst Architecture (2.0 Cycle Read Latency) Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06583 Rev . *D Revised March 06, 2008 Features ■ Separate Independent read and write dat a por[...]

  • Page 2

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 2 of 28 Logic Block Diagram (CY7C1 141V18) Logic Block Diagram (CY7C1 156V18) 512K x 8 Array CLK A (18:0) Gen. K K Control Logic Address Register D [7:0] Read Add. Decode Read Data Reg. RPS WPS Q [7:0] Control Logic Address Register Reg. Reg. Reg. 16 19 8[...]

  • Page 3

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 3 of 28 Logic Block Diagram (CY7C1 143V18) Logic Block Diagram (CY7C1 145V18) 256K x 18 Array CLK A (17:0) Gen. K K Control Logic Address Register D [17:0] Read Add. Decode Read Data Reg. RPS WPS Q [17:0] Contr ol Logic Address Register Reg. Reg. Reg. 36 [...]

  • Page 4

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 4 of 28 Pin Configur ations CY7C1 141V18 (2M x 8) 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout 23 4 5 6 7 1 A B C D E F G H J K L M N P R A CQ NC NC NC NC DOFF NC NC/72M A NWS 1 K WPS NC/144M NC NC NC NC NC TDO NC NC D5 NC NC NC TCK NC NC A NC/288M K NWS 0 V S[...]

  • Page 5

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 5 of 28 Pin Configur ations (continued) CY7C1 143V18 (1M x 18) 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout 23 4 56 7 1 A B C D E F G H J K L M N P R A CQ NC NC NC NC DOFF NC NC/144M NC/36M BWS 1 K WPS NC/288M Q9 D9 NC NC NC TDO NC NC D13 NC NC NC TCK NC D10 A[...]

  • Page 6

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 6 of 28 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Inpu t Signals. Sampled on the rising edge of K and K clocks during valid write operations. CY7C1 141V18 − D [7:0] CY7C1 156V18 − D [8:0] CY7C1 143V18 − D [17:0] CY7[...]

  • Page 7

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 7 of 28 CQ Echo Clock Synchronous Echo Clock Outputs . This is a free running clock and is synchronized to the input clock (K ) of the QDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics” on page 23. ZQ Input Output Im[...]

  • Page 8

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 8 of 28 Functional Overview The CY7C1 141V18, CY7C1 156V18, CY7C1 143V18, and CY7C1 145V18 are synchronous pipelined Burst SRAMs equipped with both a read port and a write port. The r ead port is dedicated to read operations and the write port is dedicate[...]

  • Page 9

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 9 of 28 Depth Exp ansion The CY7C1 143V18 has a Port Select input for each port. This enables easy depth expansion. Both Port Selec ts are sampled on the rising edge of the Positive Input Cl ock only (K). Eac h port select input can deselect the specified[...]

  • Page 10

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 10 of 28 Application Example Figure 1 shows the four QDR-II+ used in an application. Figure 1. Appliation Example T rut h T able The truth table for the CY7C1 141V18, CY7C1 156V18, CY7C1 143V18, and CY7C1 145V18 follows. [2, 3, 4, 5, 6, 7] Operation K RPS[...]

  • Page 11

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 1 1 of 28 W rite Cyc le Descriptions The write cycle descriptions of CY7C1 141V18 and CY7C1 143V18 follows. [2, 10] BWS 0 / NWS 0 BWS 1 / NWS 1 K K Comment s L L L–H – During the data portion of a write sequence : CY7C1 141V18 − both nibbles (D [7:0[...]

  • Page 12

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 12 of 28 The write cycle descriptions of CY7C1 145V18 follows. [2, 10] BWS 0 BWS 1 BWS 2 BWS 3 K K Comments LLLL L – H – D u r i n g t h e d a t a p o r t i o n o f a w r i t e s equence, all four bytes (D [35:0] ) are written into the device. LLLL ?[...]

  • Page 13

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 13 of 28 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan test access port (T AP) in the FBGA package. This part is fully compliant with IEEE S t andard #1 149.1-2001. The T AP operates using JEDEC standard 1.8V IO [...]

  • Page 14

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 14 of 28 IDCODE The IDCODE instruction causes a vendor-specific 32-bit code to be loaded into the instruction register . It also places the instruction register between the TDI and TDO pins and enables the IDCODE to be shifted out of the device when the T[...]

  • Page 15

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 15 of 28 T AP Controller S t ate Diagram Figure 2. T ap Controller St ate Diagram [1 1] TEST -LOGIC RESET TEST -LOGIC/ IDLE SELECT DR-SCAN CAPTURE-DR SHIFT -DR EXIT1-DR P AUSE-DR EXIT2-DR UPDA TE-DR SELECT IR-SCAN CAPTURE-IR SHIFT -IR EXIT1-IR PA U S E - [...]

  • Page 16

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 16 of 28 T AP Controller Block Diagram Figure 3. T ap Controller Block Diagram T AP Electrical Charac teristics The T ap Electrical Characteristics table over the operating range follows. [12, 13, 14] Parameter Description T est Conditions Min Max Unit V [...]

  • Page 17

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 17 of 28 T AP AC Switching Characteristics The T ap AC Switching Characteristics over the operating range follows. [15, 16] Parameter Description Min Max Unit t TCYC TCK Clock Cycle T ime 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t T[...]

  • Page 18

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 18 of 28 Identification Register Definitions Instruction Field Va l u e Description CY7C1 141V18 CY7 C1 156V18 CY7C1 143V18 CY7C1 145V18 Revision Number (31:29) 000 000 000 000 V ersion number . Cypress Device ID (28:12) 1 1010010101000101 1 1010010101001[...]

  • Page 19

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 19 of 28 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 1 1H 54 7B 81 3G 1 6P 28 10G 55 6B 82 2G 26 N 2 9 9 G 5 6 6 A 8 3 1 J 3 7P 30 1 1F 57 5B 84 2J 4 7N 31 1 1G 58 5A 85 3K 57 R 3 2 9 F 5 9 4 A 8 6 3 J 6 8R 33 10F 6[...]

  • Page 20

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 20 of 28 Power Up Sequence in QDR-II+ SRAM During Power Up, when the DOFF is tied HIGH, the DLL gets locked after 2048 cycles of stable clock. QDR-II+ SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. Power U[...]

  • Page 21

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 21 of 28 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. S torage T emperature ................................ –65°C to + 150°C Ambient T emperature with Power Applied . –55°C to[...]

  • Page 22

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 22 of 28 Cap acit ance T ested initially and after any design or process change that may affect these p arameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.8V V DDQ = 1.5V 5p F C CLK Clock I[...]

  • Page 23

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 23 of 28 Switching Characteristics Over the operating range [22, 23] Cypress Parameter Consortium Parameter Description 375 MHz 333 MHz 300 MHz Unit Min Max Min Max Min Max t POWER V DD (T ypical) to the First Access [24] 1–1–1– m s t CYC t KHKH K C[...]

  • Page 24

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 24 of 28 Switching W aveforms Read/Write/Deselect Sequence Figure 7. W aveform for 2.0 Cycle Read Latency [30, 31, 32] t KH t KL t CYC t KHKH NOP READ NOP WRITE READ WRITE 1 23 4 5 6 7 8 t t t t SA HA SC HC t HD t SC t HC A0 A1 A2 A3 t t SD HD t SD D1 1 D[...]

  • Page 25

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 25 of 28 Ordering Information Not all of the speed, package and temperature ranges are available. Contact your local sales repres entative or visit www .cypress.com for actual products of fered. Speed (MHz) Ordering Code Package Diagra m Package T ype Ope[...]

  • Page 26

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 26 of 28 300 CY7C1 141V18-300BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1 156V18-300BZC CY7C1 143V18-300BZC CY7C1 145V18-300BZC CY7C1 141V18-300BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb[...]

  • Page 27

    CY7C1 141V18, CY7C1 156V18 CY7C1 143V18, CY7C1 145V18 Document Number: 001-06583 Rev . *D Page 27 of 28 Package Diagram Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø0.25 M C A B Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0.05 0.25 C 0.15 C PIN 1 CORNER TOP VIEW B[...]

  • Page 28

    Document Number: 001-06583 Rev . *D Revised March 06, 2008 Page 28 of 28 QDR™ is a tradema rk of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate R AMs comprise a new famil y of products developed by Cypress, IDT , NEC, Renesas, and Samsung. Al l product and company names mentioned in t his do cume nt are the trademarks of thei r respect i[...]