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Table of contents for the manual
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Page 1
72-Mbit QDR™-II+ SRAM 4-W ord Burst Architecture (2.5 Cycle Read Latency) with ODT PRELIMINARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-943-2600 Document Number: 001-15887 Rev . *E Revised April 24, 2009 Features ■ Separate independent r[...]
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Page 2
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 2 of 29 Logic Block Diagram (CY7C2561KV18) Logic Block Diagram (CY7C2576KV18) 2M x 8 Array CLK A (20:0) Gen. K K Control Logic Address Register D [7:0] Read Add. Decode Read Data Reg. RPS WPS Control Logic Address Register Reg. Reg. Reg. 16 2[...]
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Page 3
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 3 of 29 Logic Block Diagram (CY7C2563KV18) Logic Block Diagram (CY7C2565KV18) 1M x 18 Array CLK A (19:0) Gen. K K Control Logic Address Register D [17:0] Read Add. Decode Read Data Reg. RPS WPS Control Logic Address Register Reg. Reg. Reg. 36[...]
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Page 4
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 4 of 29 Pin Configuration The pin configuration for CY7C2561KV18, CY7C 2576 KV18, CY7C2563KV18, and CY7C2565KV18 follow . [2] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C2561KV18 (8M x 8) 123456789 10 11 A CQ AA W P S NWS 1 K NC/144M RPS AA C[...]
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Page 5
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 5 of 29 CY7C2563KV18 (4M x 18) 123456789 10 11 A CQ NC/144M A WPS BWS 1 K NC/288M RPS AA C Q B NC Q9 D9 A NC K BWS 0 AN C N C Q 8 C NC NC D10 V SS AN CA V SS NC Q7 D8 D NC D1 1 Q10 V SS V SS V SS V SS V SS NC NC D7 E NC NC Q1 1 V DDQ V SS V S[...]
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Page 6
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 6 of 29 T able 2. Pin Definitions Pin Name IO Pin Descripti on D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks when valid write operations are active. CY7C2561KV18 − D [7:0] CY7C2576KV18 − D [8[...]
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Page 7
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 7 of 29 K Input Clock Positive Input Clock Input . The rising edge of K is used to capture synchronous inputs to the device and to dri ve out data through Q [x:0] . All accesses are in itiated on th e rising edge of K. K Input Clock Negative [...]
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Page 8
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 8 of 29 Functional Overview The CY7C2561KV18, CY7C257 6KV18, CY7C2563KV18, CY7C2565KV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write p ort. The read port is dedicated to read operatio ns and the write port is d [...]
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Page 9
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 9 of 29 Read access and write access must be scheduled such th at one transaction is initiated on any clock cycle. If both port s are selected on the same K clock rise, th e arbitration depends on the previous state of the SRAM. If both ports[...]
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Page 10
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 10 of 29 Application Example Figure 1 shows two QDR-II+ used in an application. Figure 1. Application Example T able 3. T ru th T abl e The truth table for CY7C2561KV18, CY7C2576KV 18, CY7C2563KV18, and CY7C2565KV18 follo ws. [4, 5, 6, 7, 8, [...]
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Page 11
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 1 1 of 29 T able 4. Write Cycle Descriptions The write cycle description table for CY7C2561KV18 and CY7C2563KV18 fo llows. [4, 12] BWS 0 / NWS 0 BWS 1 / NWS 1 K K Comments L L L–H – During the data portion of a write sequence : CY7C2561KV[...]
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Page 12
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 12 of 29 T able 6. Write Cycle Descriptions The write cycle description tabl e for CY7C2565KV18 follows. [4, 1 2] BWS 0 BWS 1 BWS 2 BWS 3 K K Comments LLLL L – H – D u r i n g t h e d a t a p o r t i o n o f a w r i t e s e quence, all fo[...]
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Page 13
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 13 of 29 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA package. This part is fully complia nt with IEEE S t andard #1 149.1 -2001. The T AP o perates using JEDEC [...]
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PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 14 of 29 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister . It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the T AP controlle[...]
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Page 15
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 15 of 29 Figure 2. T AP Controller St ate Diagram The stat e diagram for the T AP controller follows. [13] TEST -LOGIC RESET TEST -LOGIC/ IDLE SELECT DR-SCAN CAPTURE-DR SHIFT -DR EXIT1-DR P AUSE-DR EXIT2-DR UPDA TE-DR 1 0 1 1 0 1 0 1 0 0 0 1 [...]
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Page 16
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 16 of 29 Figure 3. T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [14, 15, 16] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V olt age I OH = − 2.0 mA 1.4 V V OH2 Output HIGH V[...]
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Page 17
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 17 of 29 T AP AC Switching Characteristics Over the Operating Range [17, 18] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL TCK Clock LOW 20 ns Setup Times t[...]
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PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 18 of 29 T able 7. Identification Register Definitions Instruction Field Va l u e Description CY7C2561KV18 CY7C2576KV18 CY7 C2563KV18 CY7C2565KV18 Revision Numb er (31:29) 000 000 000 000 V ersion number . Cypress Device ID (28:12) 1 1010010 [...]
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Page 19
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 19 of 29 T able 10. Boundary Scan Ord er Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 28 10G 56 6A 84 1J 1 6 P2 9 9 G 5 7 5 B8 5 2 J 2 6N 30 1 1F 58 5A 86 3K 3 7P 31 1 1G 59 4A 87 3J 4 7 N3 2 9 F 6 0 5 C8 8 2 K 5 7R 33 10F 61[...]
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Page 20
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 20 of 29 Power Up Sequence in QDR-II+ SRAM QDR-II+ SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operation s. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be[...]
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Page 21
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 21 of 29 Maximum Ratings Exceeding maximum ratin gs may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ..................... ............ –65°C to +150°C Ambient T empe rature with Pow e[...]
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Page 22
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 22 of 29 I SB1 Automatic Power down Current Max V DD , Both Ports Deselected, V IN ≥ V IH or V IN ≤ V IL f = f MAX = 1/t CYC , Inputs S tatic 550 MHz (x8) 380 mA (x9) 380 (x18) 380 (x36) 380 500 MHz (x8) 360 mA (x9) 360 (x18) 360 (x36) 36[...]
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Page 23
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 23 of 29 AC T est Loads and W aveforms 1.25V 0.25V R = 50 Ω 5p F INCLUDING JIG AND SCOPE ALL INPUT PULSES Device R L = 50 Ω Z 0 = 50 Ω V REF = 0.75V V REF = 0.75V [24] 0.75V Under Te s t 0.75V Device Under Te s t OUTPUT 0.75V V REF V REF O[...]
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Page 24
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 24 of 29 Switching Characteristics Over the Operating Range [24, 25] Cypress Parameter Consorti um Parameter Description 550 MHz 500 MHz 450 MH z 400 MHz Unit Min Max Min Max Min Max Min Max t POWER V DD (T ypical) to the First Access [26] 11[...]
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Page 25
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 25 of 29 Switching W aveforms Read/Writ e/Deselect Sequence [32, 33, 34] Figure 6. W aveform for 2.5 Cycle Read Latency t KH t KL t CYC t KHKH t t t t SA HA SC HC t HD t SC t HC A0 A1 A2 A3 t t SD HD t SD D1 1 D10 D12 D13 D30 D31 D32 D33 D A [...]
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Page 26
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 26 of 29 Ordering Information The following table lists all possible speed, package and temperat ure range options supported fo r these devi ces. Note that some options listed may not be availabl e for order entry . T o verify th e availabi l[...]
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Page 27
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 27 of 29 450 CY7C256 1KV18-450BZC 51-851 80 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C2576KV18-450BZC CY7C2563KV18-450BZC CY7C2565KV18-450BZC CY7C2561KV18-450BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x[...]
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Page 28
PRELIMIN ARY CY7C2561KV18, CY7C2576KV18 CY7C2563KV18, CY7C2565KV18 Document Number: 001-15887 Rev . *E Page 28 of 29 Package Diagram Figure 7. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0.05 0.25 C 0.15 C PIN 1 CORN[...]
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Page 29
Document Number: 001-15887 Rev . *E Revised April 24, 2009 Page 29 of 29 QDR RAMs an d Quad Dat a Rate RAMs co mprise a ne w family of products d eveloped by Cy press, IDT , NEC, Re nesas, and Sam sung. All pr oduct and co mpany names mentione d in this do cument are the tr ademark s of their re specti ve holders . PRELIMIN ARY CY7C2561KV18, CY7C25[...]