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Fujitsu MB3891 manual

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Table of contents for the manual

  • Page 1

    DS04-27801-1E FUJITSU SEMICONDUCT OR DA T A S H E E T ASSP F or P o wer Management Applications (Mobile Phones) P o wer Mana g ement IC f or GSM Mobile Phone MB3891 ■ ■ ■ ■ DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones . It contains all the necessar y functions to suppor t all Digital,[...]

  • Page 2

    MB3891 2 ■ ■ ■ ■ PIN ASSIGNMENT (TOP VIEW) (FPT-64P-M03) N.C. : 49 N.C. : 50 SW2-OUTPUT : 51 SW2-INPUT : 52 SW1-ON : 53 SW2-ON : 54 SW3-ON : 55 CONT3 : 56 CONT5 : 57 OUT5 : 58 GND5 : 59 VBAT3 : 60 VBAT3 : 61 VBAT3 : 62 N.C. : 63 N.C. : 64 N.C. : 1 N.C. : 2 OUT3 : 3 OUT3 : 4 GND3 : 5 OUT2 : 6 OUT2 : 7 VBAT1 : 8 VBAT1 : 9 VBAT1 : 10 VBAT1 : 1[...]

  • Page 3

    MB3891 3 ■ ■ ■ ■ PIN DESCRIPTION (Continued) Pin No. Symbol I/O Descriptions 1, 2 N.C.  Non connection. 3, 4 OUT3 O LDO3 output pin. 5G N D 3  LDO3 ground pin. 6, 7 OUT2 O LDO2 output pin. 8, 9, 10, 11 VBAT1  Battery voltage input pin for LDO1 and LDO2. 12, 13 OUT1 O LDO1 output pin. 14 CONT1 I Power on input from keypad (Active lo[...]

  • Page 4

    MB3891 4 (Continued) Pin No. Symbol I/O Descriptions 42, 43 VBAT4  Supply voltage for LDO4. 44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V). 45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain). 46 SW1-INPUT I Input of general purpose switch number 1 (Source). 47 SW3-OUTPUT O Output of general purpose switch n[...]

  • Page 5

    MB3891 5 ■ ■ ■ ■ BLOCK DIA GRAM 14 16 53 54 55 44 22 33 20 8 9 10 11 12 13 17 18 19 15 + − 6 7 46 45 52 51 48 60 61 42 43 62 3 5 4 47 40 41 39 21 34 35 36 37 38 27 28 26 CONT1 CONT6 CONT2 SW1-ON SW2-ON SW3-ON CONT4 VREF RESET-IN CLK-IN µ P-IO RST CLK SIM-IO VSIM-ON SIMPROG OSC VBAT2 VBAT1 OUT1 OUT2 SW1-INPUT SW1-OUTPUT SW2-INPUT SW2-OUTP[...]

  • Page 6

    MB3891 6 ■ ■ ■ ■ ABSOLUTE MAXIMUM RA TINGS * : The packages are mounted on the dual-sided epo xy board(10 cm × 10 cm) W ARNING: Semiconductor de vices can be per manently damaged by application of stress (v oltage, current, temperature , etc.) in e xcess of absolute maximum ratings. Do not e xceed these ratings. ■ ■ ■ ■ RECOMMENDED[...]

  • Page 7

    MB3891 7 ■ ■ ■ ■ ELECTRICAL CHARA CTERISTICS (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) * : Standard design v alue (Continued) P arameter Symbol Pin No. Conditions Va l u e Unit Min. T yp. Max. General Shutdown supply current I BAT1 8, 9, 10, 11, 20, 42, 43, 60, 61, 62 UVLO = “L”, BACKUP UVLO = “L”  80 µ A I BAT2 8, [...]

  • Page 8

    MB3891 8 (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) (Continued) Pa r a m e t e r Sy m b o l Pin No. Conditions Va l u e Unit Min. T yp. Max. LDO1 (OUT1) Output voltage V O 12, 13 − 50 µ A > OUT1 > − 120 mA 2.000 2.100 2.200 V Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V  10 mV Load reguration Load 12, 13 − 50 [...]

  • Page 9

    MB3891 9 (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) (Continued) P arameter Symbol Pin No. Conditions Va l u e Unit Min. T yp. Max. LDO3 (OUT3) Output voltage V O 3, 4 − 50 µ A > OUT3 > − 100 mA 2.700 2.800 2.900 V Line regulation Line 3, 4 3.1 V < VBAT3 < 5.5 V  10 mV Load regulation Load 3, 4 − 50 µ A > OUT3 &[...]

  • Page 10

    MB3891 10 (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) (Continued) P arameter Symbol Pin No. Conditions Va l u e Unit Min. T yp. Max. LDO6 (V-BACKUP) Output voltage V O 21 − 10 µ A > V-BA CKUP > − 250 µ A 2.000 2.100 2.200 V Line regulation Line 21 3.1 V < VBAT2 < 5.5 V  10 mV Load regulation Load 21 − 10 µ A > [...]

  • Page 11

    MB3891 11 (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) (Continued) P arameter Symbol Pin No. Conditions Va l u e Unit Min. T yp. Max. VSIMOUT chargepump Ripple rejection ∆ VCC-VSIM/ ∆ VSIMOUT R.R 29 f = 217 Hz 30  dB Output current I O 29 3.1 V < VCC-VSIM < 5.5 V, VSIMOUT = 5 V 10  mA I O 29 3.1 V < VCC-VSIM < 5.5[...]

  • Page 12

    MB3891 12 (Continued) (Ta = + 25 ° C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V) P arameter Symbol Pin No. Conditions Va l u e Unit Min. T yp. Max. SIM interface 5 V (SIMPROG = H) Output voltage V OH 36 RST (max.) = − 20 µ A VSIMOUT − 0.7  VSIMO UT V V OL 36 RST (max.) = 200 µ A0  0.6 V Rise time T R 36 RESET-IN = RST = 30 pF  400 µ s F[...]

  • Page 13

    MB3891 13 ■ ■ ■ ■ TYPICAL CHARA CTERISTICS (Continued) 400 350 300 250 200 150 100 50 0 012 345 Ta = + 25 ° C CONT1 = “L” CONT2 = “H” CONT3 = “H” CONT4 = OPEN CONT5 = OPEN CONT6 = OPEN VSIM-ON = “H” SIMPROG = “H” OUT1 = No load OUT2 = No load OUT3 = No load OUT4 = No load OUT5 = No load V-BACKUP = No load VSIMOUT = No l[...]

  • Page 14

    MB3891 14 0 − 20 − 40 − 60 − 80 − 100 10 100 1 k 10 k 100 k 1 M Ta = + 25 ° C VBAT = 3.6 V OUT1 = 1 µ F OUT1 = 18 Ω CONT1 = “L” CONT6 = OPEN 0 − 20 − 40 − 60 − 80 − 100 10 100 1 k 10 k 100 k 1 M Ta = + 25 ° C VBAT = 3.6 V OUT1 = 1 µ F CONT1 = “L” CONT6 = OPEN 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 − 50 − 100 − 150 −[...]

  • Page 15

    MB3891 15 (Continued) 4 3 2 1 0 2 1 0 0 50 100 150 200 250 300 350 400 450 500 Ta = + 25 ° C OUT1 = No load CONT1 = “L” CONT6 = OPEN VBAT OUT1 4 2 0 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 OUT1 VBAT Ta = + 25 ° C VBAT = 1 µ F OUT1 = No load CONT1 = “L” CONT6 = OPEN 4 2 0 2 1 0 02 0 4 0 60 80 100 120 140 160 180 200 OUT1 CONT1 T[...]

  • Page 16

    MB3891 16 (Continued) 2.0 1.5 1.0 0.5 0.0 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 OUT1 = − 120 mA 0 A V C OUT1 Ta = + 25 ° C VBAT = 3.6 V CONT1 = “L” CONT6 = OPEN VBAT = 3.6 V VREF = 1.225 V LDO1 OUT1 1 µ F 120 mA 4 V 0 V V C 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3 2 1 0 OUT2 V C 0 1 02 03 04 05 06 07 08 09 0 1 0 0 OUT2 = 0 A − 50 mA Ta =[...]

  • Page 17

    MB3891 17 (Continued) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 01234 56 7 Ta = + 25 ° C VFIL = 0.1 µ F 1.24 1.23 1.22 1.21 1.20 1.19 − 40 − 20 0 20 40 60 80 100 VBAT = 3.6 V Ta = + 25 ° C VBAT = 3.6 V VSIM-ON = “H” SIMPROG = “H” VSIMOUT = 510 Ω VSIMOUT = No load 100000 10000 1000 100 10 1 012 345 Ta = + 25 ° C VBAT = 3.6 V VSIM-ON = “H?[...]

  • Page 18

    MB3891 18 (Continued) 3.00 2.99 2.98 2.97 2.96 2.95 2.94 2.93 2.92 2.91 2.90 0 − 5 − 10 − 15 − 20 VCC-VISM = 5.5 V VCC-VISM = 3.1 V VCC-VISM = 3.6 V Ta = + 25 ° C VSIM-ON = “H” SIMPROG = “L” 5.00 4.95 4.90 4.85 4.80 4.75 4.70 4.65 4.60 0 − 5 − 10 − 15 − 20 VCC-VISM = 5.5 V VCC-VISM = 3.1 V VCC-VISM = 3.6 V Ta = + 25 ° C VS[...]

  • Page 19

    MB3891 19 (Continued) 100 90 80 70 60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 Ta = + 25 ° C VSIM-ON = “H” SIMPROG = “L” ILOAD = − 10 mA ILOAD = − 1 mA 100 90 80 70 60 50 40 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 ILOAD = − 10 mA ILOAD = − 1 mA Ta = + 25 ° C VSIM-ON = “H” SIMPROG = “H” 100 90 80 70 60 50 40 30 20 10 0 0 − 5 ?[...]

  • Page 20

    MB3891 20 (Continued) SIMPROG VSIMOUT Ta = + 25 ° C VBAT = VCC-VSIM = 3.6 V VSIMOUT = 510 Ω VSIM-ON = “H” 0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 10 5 0 5 4 3 2 1 0 SIMPROG VSIMOUT Ta = + 25 ° C VBAT = VCC-SIM = 3.6 V VSIMOUT = 510 Ω VSIM-ON = “H” 0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 10 5 0 5 4 3 2 1 0 0 5 15 20 25 30 35 40[...]

  • Page 21

    MB3891 21 (Continued) 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 SIMPROG = "H" SIMPROG = "L" Ta = +25 ° C VBAT = VCC-VSIM = 3.6 V VSIM-ON = "H" CONT1 = "L" CONT6 = OPEN 2.5 2.0 1.5 1.0 0.5 0.0 012 345 Ta = +25 ° C VBAT = VCC-VSIM = 3.6 V VSIM-ON = “H” SIMPROG = “L” or “H” CONT1 = “L” CONT6 = OPEN 4[...]

  • Page 22

    MB3891 22 (Continued) 3.10 3.05 3.00 2.95 2.90 2.85 2.80 − 40 − 20 0 20 40 60 80 100 VBAT = VCC-VSIM = 3.6 V VSIM-ON = “H” SIMPROG = “L” 5.00 4.95 4.90 4.85 4.80 4.75 4.70 − 40 − 20 0 20 40 60 80 100 VBAT = VCC-VSIM = 3.6 V VSIM-ON = “H” SIMPROG = “H” 1000 800 600 400 200 0 − 40 − 20 20 0 40 60 80 100 Output voltage V SI[...]

  • Page 23

    MB3891 23 ■ ■ ■ ■ FUNCTIONAL DESCRIPTION (1) MAIN UVLO/B A CKUP UVLO T ransient po w er-on surge states or sudden drops in supply v oltage (VBA T2) can cause an IC to operate abnor- mally , leading to destruction or damage to system elements. T o prev ent this type of f ault, the under voltage loc kout circuits (UVLO/ Back up UVLO) will shu[...]

  • Page 24

    MB3891 24 (8) LDO5 The LDO5 circuits uses the ref erence voltage supply and generates an output v oltage (2.8 V typ .) at the OUT5 ter minal (pin 57) when the OUT1 terminal (pin 12,13) is in output state and an “H” le v el signal is input at the CONT5 ter minal (pin 57). P ower can be dra wn from the OUT5 ter minal for e xter n al use, up to a [...]

  • Page 25

    MB3891 25 ■ ■ ■ ■ OPERA TION TIMING CHART VBAT1 to VBAT4, VCC-VSIM CONT1 CONT6 CONT5 CONT2 CONT3 SW1-ON VSIM-ON SIMPROG REF-OUT OUT6 OUT1 XPOWERGOOD OUT5 OUT2 OUT3 (OUT4) SW1-OUTPUT VSIMOUT SW2-OUTPUT (SW3-OUTPUT) SW2-ON (SW3-ON) delay 2.0 V VSIMOUT = 5 V VSIMOUT = 3 V (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) ([...]

  • Page 26

    MB3891 26 ■ ■ ■ ■ APPLICA TION EXAMPLE C1 1 µ F C12 1 µ F C11 1 µ F C2 0.033 µ F C3 1 µ F C4 1 µ F C5 1 µ F C6 1 µ F C7 1 µ F C8 0.1 µ F C10 0.1 µ F C9 10 µ F C13 1 µ F C14 1 µ F µ P SIM KEYPAD R1 200 k Ω R2 200 k Ω R3 200 k Ω R4 200 k Ω R5 200 k Ω 14 8 9 10 11 15 16 54 53 55 12 13 17 18 19 6 7 52 51 48 47 60 61 62 [...]

  • Page 27

    MB3891 27 ■ ■ ■ ■ USA GE PRECA UTIONS • Printed cir cuit boar d gr ound lines should be set up with consideration for common impedance. • T ake appropriate static electricity measures. • Containers f or semiconductor materials should ha v e anti-static protection or be made of conductive material. • After mounting, printed circuit b[...]

  • Page 28

    MB3891 ■ ■ ■ ■ P A CKA G E DIMENSION 64-pin plastic LQFP (FPT-64P-M03) Note : Pins width and pins thickness include plating thickness. Dimensions in mm (inches) . C 1998 FUJITSU LIMITED F64009S-3C-6 "A" 33 32 17 16 1 64 49 48 INDEX 12.00±0.20(.472±.008)SQ 10.00±0.10(.394±.004)SQ 0.50±0.08 (.020±.003) .007 –.001 +.003 –0.[...]

  • Page 29

    MB3891 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorpor[...]