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Table of contents for the manual
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Page 1
DA T A SH EET Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 DISCRETE SEMICONDUCTORS BGD885 860 MHz, 17 dB gain power doubler amplifier dbook, halfpage M3D248[...]
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Page 2
2001 Nov 02 2 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 FEATURES Excellent linearity Extremely low nois e Silicon nitride passivation Rugged cons truction Gold metallization ensu res excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV sy stems operating over [...]
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Page 3
2001 Nov 02 3 NXP Semico nductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 CHARACTERISTICS Ta b l e 1 Bandwidth 40 to 8 60 M Hz ; V B =2 4V ; T mb =3 5 C; Z S =Z L =7 5 Notes 1. Decrease per octave of 1.5 dB. 2. V p = 59 dBmV at f p =3 4 9 . 2 5M H z ; V q = 59 dBmV at f q =4 0 3 . 2 5M H z ; measured at f p [...]
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Page 4
2001 Nov 02 4 NXP Semico nductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 Fig.2 Test circuit. 1 23 45 67 89 BGD885 input C2 output V B = 24 V MEA094-2 10 V C1 List of component s (see Fig.2) COMPONENT DESCRIPTION V ALUE C1 ceramic multilay er capacitor 1 nF (max.) C2 ceramic multilay er cap acitor 1 nF Rr e s i s t [...]
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Page 5
2001 Nov 02 5 NXP Semico nductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 PACKAGE OUTLINE REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA DIMENSIONS (mm are the original dimensions) SOT115D 0 5 10 mm scale Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-[...]
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Page 6
2001 Nov 02 6 NXP Semico nductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 DAT A SHEET ST ATUS Notes 1. Please consult the most recently issued documen t before initiating or completing a d es ign. 2. The product s tatus of device (s) described in this document may ha ve changed since this document was pub lished and[...]
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Page 7
2001 Nov 02 7 NXP Semico nductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 NXP Semiconductors does not accept any liability related to any default, damage, cost s or problem which is based on any weakness o r default in the customer’s ap plications or products, or the applic ation o r use by customer’s th ird par[...]
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Page 8
NXP Semiconductors provides High Performance Mixed Signal and S tandard Product solutions that leverage its leading RF , Analog, Power Management, Interface, Security and Digital Processing expertise Contact information For additional information p leas e visit: http://www .nxp.com For sales offices addr es ses send e-mail to : salesaddresses@nxp.c[...]