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Table of contents for the manual
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Page 1
DA T A SH EET Product specification Supersedes data of 2002 J an 31 2002 Sep 10 DISCRETE SEMICONDUCT ORS BGA2712 MMIC wideband amplifier b ook, halfpage MBD128[...]
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Page 2
2002 Sep 10 2 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 FEA TURES • Internally matched to 50 Ω • Wide frequency range (3.2 GHz at 3 dB bandwidth) • Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness) • 5 dBm saturated output power at 1 GHz • Good linearity (11 dBm IP3 (out) at 1 GHz) • Unconditionally[...]
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Page 3
2002 Sep 10 3 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 THERMAL CHARA CTERISTICS CHARA CTERISTICS V S =5V ; I S = 12.3 mA; T j =2 5 ° C; unless otherwise specified. SYMBOL P ARAMETER CONDITIONS V ALUE UNIT R th j-s thermal resistance from junction to solder point P tot = 200 mW; T s ≤ 90 ° C 300 K/W SYMBOL [...]
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Page 4
2002 Sep 10 4 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 APPLICA TION INFORMA TION Figure 2 shows a typical application circuit for the BGA2712 MMIC. The device is internally matched to 50 Ω , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 s[...]
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Page 5
2002 Sep 10 5 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 handbook, full pagewidth MLD904 0 0.2 0.6 0.4 0.8 1.0 1.0 + 5 + 2 + 1 + 0.5 + 0.2 0 − 0.2 − 0.5 − 1 − 2 − 5 0.2 0.5 4 GHz 100 MHz 2 5 180 ° 135 ° 90 ° 45 ° 0 ° − 45 ° − 90 ° − 135 ° Fig.7 Input reflection coefficient (s 11 ); typical[...]
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Page 6
2002 Sep 10 6 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 handbook, halfpage 0 1000 f (MHz) 2000 4000 0 − 50 − 10 3000 − 20 − 30 − 40 MLD906 s 12 2 (dB) Fig.9 Isolation ( s 12 2 ) as a function of frequency; typical values. I S = 12.3 mA; V S = 5 V; P D = − 30 dBm; Z O =5 0 Ω. handbook, halfp[...]
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Page 7
2002 Sep 10 7 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 handbook, halfpage 0 (1) (3) (2) 1000 2000 f (MHz) NF (dB) 3000 6 5 3 2 4 MLD902 Fig.13 Noise figure as a function of frequency; typical values. Z O =5 0 Ω. (1) I S = 15.1 mA; V S = 5.5 V. (2) I S = 12.3 mA; V S =5V . (3) I S = 10.1 mA; V S = 4.5 V. handb[...]
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Page 8
2002 Sep 10 8 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader[...]
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Page 9
2002 Sep 10 9 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 P ACKA GE OUTLINE REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT363 SC-88 wB M b p D e 1 e pin 1 index A A 1 L p Q detail X H E E v M A A B y 0 1 2 mm scale c X 13 2 4 5 6 Plastic surface mounted package; 6 leads SOT363 UNIT A [...]
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Page 10
2002 Sep 10 10 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 D A T A SHEET ST A TUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The lates[...]
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Page 11
2002 Sep 10 11 Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 NOTES[...]
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Page 12
© Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No[...]