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Philips BGD904L manual

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Table of contents for the manual

  • Page 1

    DA T A SH EET Product specification Supersedes data of 1999 A ug 17 2001 Nov 01 DISCRETE SEMICONDUCT ORS BGD904L 860 MHz, 20 dB gain power doubler amplifier b ook, halfpage M3D252[...]

  • Page 2

    2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doub ler amplifier BGD904L FEA TURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Low DC current consumption. [...]

  • Page 3

    2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L CHARA CTERISTICS Bandwidth 40 to 900 MHz; V B = 24 V ; T mb =3 5 ° C; Z S =Z L =7 5 Ω . SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT G p power gain f = 50 MHz 19.7 20 20.3 dB f = 900 MHz 20.5 21 21.5 dB SL slope straight line f[...]

  • Page 4

    2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L Notes 1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at − 6 dB offset (550 to 750 MHz). 2. Tilt = 12.5 dB (50 to 860 MHz). 3. f p = 55.25 MHz; V p = 44 dBmV; f q = 805.25 MHz; V q = 44 dBmV; measured at f p +f q = 860.5 MHz. 4. f p = [...]

  • Page 5

    2001 Nov 01 5 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L Fig.2 Composite triple beat as a function of frequency under tilted conditions. Z S =Z L =7 5 Ω ; V B = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at − 6 dB offset (550 to 750 MHz). handbook, halfpage 0 V o (dBmV) f [...]

  • Page 6

    2001 Nov 01 6 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L Fig.5 Composite triple beat as a function of frequency under tilted conditions. Z S =Z L =7 5 Ω ; V B = 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) V o . (2) Typ. +3 σ . (3) Typ. (4) Typ. − 3 σ . handbook, halfpage 0 V o [...]

  • Page 7

    2001 Nov 01 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L Fig.8 Composite triple beat as a function of output voltage. Z S =Z L =7 5 Ω ; V B = 24 V; 129 chs; f m = 859.25 MHz. (1) Typ. +3 σ . (2) Typ. (3) Typ. − 3 σ . handbook, halfpage 40 V o (dBmV) 45 50 55 MGS458 CTB (dB) − 20 − [...]

  • Page 8

    2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L P A CKA GE OUTLINE UNIT A 2 max. c ee 1 q Q max. q 1 q 2 U 1 max. U 2 W REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 20.8 9.1 0.51 0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15 3.85 2.4 38.1 25.4 10.2[...]

  • Page 9

    2001 Nov 01 9 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L D A T A SHEET ST A TUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was[...]

  • Page 10

    2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L NOTES[...]

  • Page 11

    2001 Nov 01 11 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doub ler amplifier BGD904L NOTES[...]

  • Page 12

    © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No[...]