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Cypress Semiconductor CY62148E manual

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Table of contents for the manual

  • Page 1

    CY62148E MoBL ® 4-Mbit (512K x 8) S t atic RAM Cypress Semic onductor Corpora tion • 198 Champi on Cour t • San Jose , CA 95134-1709 • 408-943 -2600 Document #: 38-05442 Rev . *F Revised March 28, 2007 Features • V ery high speed: 45 ns • V oltage range: 4.5V–5.5V • Pin compatible with CY62148B • Ultra low standby power — T ypica[...]

  • Page 2

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 2 of 10 Logic Block Diagram Pin Configuration [2, 4] A 0 IO 0 IO 7 IO 1 IO 2 IO 3 IO 4 IO 5 IO 6 A 1 A 2 A 3 A 4 A 5 A 6 A 7 A 8 A 9 SENSE AMPS POWER DOWN CE WE OE A 13 A 14 A 15 A 16 A 17 ROW DECODER COLUMN DECODER 512K x 8 ARRA Y INPUT BUFFER A 10 A 11 A 12 A 18 Note 4. NC pins are not connected[...]

  • Page 3

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 3 of 10 Maximum Ratings Exceeding maximum ratings may im p air the useful life of the device. These user guidelines are not teste d. S torage T emperature .............. ................. . –65°C to + 150°C Ambient T emperatur e with Power Applied .......................... .................. [...]

  • Page 4

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 4 of 10 Thermal Resist ance [10] Parameter Des cription T est Conditions SOIC Package TSOP II Package Unit Θ JA Thermal Resistance (Junction to Ambient) S till Air , soldered on a 3 × 4.5 inch, two-layer printed circuit board 75 77 ° C/W Θ JC Thermal Resistance (Junction to Case) 10 13 ° C/W [...]

  • Page 5

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 5 of 10 Switching Characteristics (Over th e Operating Range ) [12] Parameter Description 45 ns 55 ns [2] Unit Min Max Min Max Read Cycle t RC Read Cycle T ime 45 55 ns t AA Address to D ata V alid 45 55 ns t OHA Data Hold from Address Change 10 10 ns t ACE CE LOW to Data V alid 45 55 ns t DOE OE [...]

  • Page 6

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 6 of 10 Switching W aveforms Read Cycle No. 1 (Address Transition Controlled) [16, 17] Read Cycle No. 2 (OE Controlled) [17, 18] Write Cycl e No. 1 (WE Controlled, OE HIGH During Write) [19, 20] PREVIOUS DATA VALID DATA VALID RC t AA t OHA t RC ADDRESS DATA OUT 50% 50% DA T A V ALID t RC t ACE t D[...]

  • Page 7

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 7 of 10 Write Cycl e No. 2 (CE Controlled) [19, 20] Write Cycl e No. 3 (WE Controlled, OE LOW) [20] T ruth T able CE WE OE IO’ s Mode Power H X X High Z Deselect/Power down S tandby (I SB ) L H L Data Out Read Active (I CC ) L L X Data In Write Active (I CC ) L H H High Z Selected, Outputs Disab[...]

  • Page 8

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 8 of 10 Ordering Information Speed (ns) Ordering Code Package Diagram Package T ype Operating Range 45 CY62148EL L-45ZSXI 51-85095 32-pin Th in Small Outline Package II (Pb-free ) Industrial 55 CY62148EL L-55SXI 51-85081 32-p in Small Outlin e Integrated Circuit (Pb-free) Industrial 55 CY62148EL L[...]

  • Page 9

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 9 of 10 © Cypress Semicond uctor Corporation, 2006-2007. The i nformation cont ained herein is subject to change witho ut notice. Cypress Semiconductor Corporation assumes no responsibility for the use of an y circuitry other than circ uitry embodied in a Cypress product. No r does it convey or i[...]

  • Page 10

    CY62148E MoBL ® Document #: 38-05442 Rev . *F Page 10 of 10 Document History Page Document Title: CY62148E MoBL ® , 4-Mbit (512K x 8) St atic RAM Document Number: 38-05442 REV . ECN NO. Issue Date Orig. of Change Description of Cha nge ** 201580 01/08/04 AJU New Dat a Shee t *A 249276 Se e ECN SYT Changed from Advance Informa tion to Preliminary [...]