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Cypress Semiconductor CY7C1516KV18 manual

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  • Page 1

    72-Mbit DDR-II SRAM 2-W ord Burst Architecture CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1 709 • 408-943-2600 Document Number: 001-00437 Rev . *E Revised March 30, 2009 Features ■ 72-Mbit Density (8M x 8, 8M x 9, 4M x 18, 2M x 36) ■ 333 MHz Clock for[...]

  • Page 2

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 2 of 30 Logic Block Diagram (CY7C1516KV18) Logic Block Diagram (CY7C1527KV18) Wri te Reg Wri te Reg CLK A (21:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W Output Logic Reg. Reg. Reg. 8 16 8 NWS [1:0] V REF Write Add. Deco[...]

  • Page 3

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 3 of 30 Logic Block Diagram (CY7C1518KV18) Logic Block Diagram (CY7C1520KV18) Wri te Reg Writ e Reg CLK A (21:0) Gen. K K Control Logic Address Register Read Add. Decode Read Data Reg. R/W Output Logic Reg. Reg. Reg. 18 36 18 BWS [1:0] V REF Write Add. De[...]

  • Page 4

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 4 of 30 Pin Configuration The pin configurations for CY7C1516KV18, CY7C 1527 KV18, CY7C1518KV18, and CY7C1520KV18 fo llow . [1] 165-Ball FBGA (13 x 15 x 1 .4 mm) Pinout CY7C1516KV18 (8M x 8) 123456789 10 11 A CQ AA R / W NWS 1 K NC/144M LD AA C Q B NC NC [...]

  • Page 5

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 5 of 30 CY7C1518KV18 (4M x 18) 123456789 10 11 A CQ AA R / W BWS 1 K NC/14 4M LD AA C Q B NC DQ9 NC A NC/288M K BWS 0 AN C N C D Q 8 C NC NC NC V SS AA 0A V SS NC DQ7 NC D NC NC DQ10 V SS V SS V SS V SS V SS NC NC NC E NC NC DQ1 1 V DDQ V SS V SS V SS V D[...]

  • Page 6

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 6 of 30 Pin Definitions Pin Name I/O Pin Description DQ [x:0] Input Output- Synchronous Dat a Input Outp ut Signals . Inputs are sampled on the rising edge of K and K clocks during valid write operations. The se pins drive ou t the requested data w hen th[...]

  • Page 7

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 7 of 30 CQ Output Clock CQ Referenced with Respect to C . This is a free running clock and is synchronized to the input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated wi th respect to K. The timing for the echo clocks i[...]

  • Page 8

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 8 of 30 Functional Overview The CY7C1516KV18, CY7C1527KV18, CY7C1518 KV18, and CY7C1520KV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and a half cycles when DOFF pi n is tied HIGH. When [...]

  • Page 9

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 9 of 30 Programmable Impedan ce An external resistor , RQ, must be connected between the Z Q pin on the SRAM and V SS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of th e intended line impedance d riven by [...]

  • Page 10

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 10 of 30 T ruth T able The truth table for the CY7C1516KV18, CY7C1527KV1 8, CY7C1518KV18, and CY7C1520KV18 follow . [2, 3, 4, 5, 6, 7] Operation K LD R/W DQ DQ Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges[...]

  • Page 11

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 1 1 of 30 Write Cycle Descriptions The write cycle description tabl e for CY7C1527KV18 follows. [2, 8] BWS 0 K K L L–H – During the data portion of a write sequence, th e single byte (D [8:0] ) is written into the device. L – L–H During the data p[...]

  • Page 12

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 12 of 30 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA package. This part is fully compliant with IEEE S tandard #1 149.1 -2001. The T AP operates using JEDEC standard 1.8V IO[...]

  • Page 13

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 13 of 30 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister . It also places the instruction re gister between the TDI and TDO pins and shifts the IDCODE out of the device when the T AP controller enters the[...]

  • Page 14

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 14 of 30 T AP Controller St ate Diag ram The state diagram for the T AP controller follows. [9] TEST -LOGIC RESET TEST -LOGIC / IDLE SELECT DR-SCAN CAPTURE-DR SHIFT -DR EXIT1-DR P AUSE-DR EXIT2-DR UPDA TE-DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1[...]

  • Page 15

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 15 of 30 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.0 mA 1.4 V V OH2 Output HIGH V oltage I OH = − 100 [...]

  • Page 16

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 16 of 30 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit t TCYC TCK Clock Cycle Time 50 ns t TF TCK Clock Frequency 20 MHz t TH TCK Clock HIGH 20 ns t TL TCK Clock LOW 20 ns Setup Times t TMSS TMS Set[...]

  • Page 17

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 17 of 30 Identification R egi ster Definitions Instruction Field Va l u e De scription CY7C1516KV18 CY7C1527KV18 CY7 C1518KV18 CY7C1520KV18 Revision Numb er (31:29) 000 000 000 000 V ersion numbe r . Cypress Device ID (28:12) 1 1010100010000100 1 10101000[...]

  • Page 18

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 18 of 30 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bum p ID 0 6R 28 10G 56 6A 84 1J 1 6 P2 9 9 G 5 7 5 B8 5 2 J 2 6N 30 1 1F 58 5A 86 3K 3 7P 31 1 1G 59 4A 87 3J 4 7 N3 2 9 F 6 0 5 C8 8 2 K 5 7R 33 10F 61 4B 89 1K 6 8R 34 1 1E 62[...]

  • Page 19

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 19 of 30 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialize d in a predefined manner to prevent unde fined operation s. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW)[...]

  • Page 20

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 20 of 30 Maximum Ratings Exceeding maximum ratin gs may impair the useful life of the device. These user guidelines are not teste d. S torage T emperature ................ ................ . –65°C to +150°C Ambient T emp erature with Pow er Applied.. [...]

  • Page 21

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 21 of 30 I DD [19] V DD Operating Supply V DD = Max, I OUT = 0 mA, f = f MAX = 1/t CYC 200 MHz (x8) 370 mA (x9) 370 (x18) 380 (x36) 450 167 MHz (x8) 340 mA (x9) 340 (x18) 340 (x36) 400 I SB1 Automatic Power Down Current Max V DD , Both Ports Deselected, V[...]

  • Page 22

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 22 of 30 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.8V , V DDQ = 1.5V 2 pF C O Output C[...]

  • Page 23

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 23 of 30 Switching Characteristics Over the Operating Range [20, 21] Cypress Parameter Consorti um Parameter Description 333 MHz 300 MHz 250 MHz 20 0 MHz 167 MHz Unit Min Max Min Max Min Max Min Max Min Max t POWER V DD (T ypical) to the First Access [22][...]

  • Page 24

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 24 of 30 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V alid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.45 – –0.45 – –0.45 ?[...]

  • Page 25

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 25 of 30 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 6, 27, 28] READ READ READ NOP NOP WRITE WRITE NOP 1 23 4 56 7 8 9 1 0 Q40 t KHCH t CO t t HC t t HA t SD t HD t KHCH t SD t HD DON’ T CARE UNDEFINED t CLZ t DOH t CHZ SC t KH t KHKH[...]

  • Page 26

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 26 of 30 Ordering Information The following table lists all possible speed, package, and temperat ure range options supported for these devi ces. Note that som e options listed may not be availabl e for order entry . T o ve rify th e availabili ty of a sp[...]

  • Page 27

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 27 of 30 250 CY7C1516KV18-250BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm ) Commercial CY7C1527KV18-250BZC CY7C1518KV18-250BZC CY7C1520KV18-250BZC CY7C1516KV18-250BZXC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) [...]

  • Page 28

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 28 of 30 167 CY7C1516KV18-167BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm ) Commercial CY7C1527KV18-167BZC CY7C1518KV18-167BZC CY7C1520KV18-167BZC CY7C1516KV18-167BZXC 51-85180 165-Ball Fine Pi tch Ball Grid Array (13 x 15 x 1.4 mm) [...]

  • Page 29

    CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Number: 001-00437 Rev . *E Page 29 of 30 Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.05 M C B A 0.15(4X) 0.35±0.06 SEATING PLANE 0.53±0.05 0.25 C 0.15 C PIN 1 CORNER TOP VIEW B[...]

  • Page 30

    Document Number: 001-00437 Rev . *E Revised March 30, 2009 Page 30 of 30 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s develope d by Cypress, IDT , NEC, Renesas, and Samsung. Al l pr oduct an d company nam es mentione d in this docum ent are the tr ademark s of their re specti ve holders . CY7C1516KV18, CY7C1527KV18 CY7C1518[...]