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Cypress CY7C1019D manual

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Table of contents for the manual

  • Page 1

    CY7C1019D 1-Mbit (128K x 8) S t atic RAM Cypress Semic onductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-260 0 Document #: 38-05464 Rev . *E Revised February 22, 2007 Features • Pin- and function-compatible with CY7C1019B • High speed —t AA = 10 ns • Low active power —I CC = 80 mA @ 10 ns • Low CMOS s[...]

  • Page 2

    CY7C1019D Document #: 38-05464 Rev . *E Page 2 of 1 1 Pin Configuration Selection Guide –10 (Industrial) Unit Maximum Access T ime 10 ns Maximum Operating Current 80 mA Maximum S tandby Current 3 mA To p V i e w SOJ/TSOPII 1 2 3 4 5 6 7 8 9 10 11 14 19 20 24 23 22 21 25 28 27 26 12 13 29 32 31 30 16 15 17 18 A 7 A 1 A 2 A 3 CE IO 0 IO 1 V CC A 13[...]

  • Page 3

    CY7C1019D Document #: 38-05464 Rev . *E Page 3 of 1 1 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not te sted. S torage T emperature .............. ................. .. –65°C to + 150°C Ambient T emperatur e with Power Applied ......... ................. ...... ............. [...]

  • Page 4

    CY7C1019D Document #: 38-05464 Rev . *E Page 4 of 1 1 Cap acitance [3] Parameter Description T est Con dition s Max Unit C IN Input Capacitance T A = 25° C, f = 1 MHz, V CC = 5.0V 6 p F C OUT Output Cap acitance 8 pF Thermal Resist ance [3] Parameter Description T est Conditions 400-Mil Wide SO J TSOP II Unit Θ JA Thermal Resistance (Junction to [...]

  • Page 5

    CY7C1019D Document #: 38-05464 Rev . *E Page 5 of 1 1 Switching Characteristics (Over the Operating Range) [5] Parameter Description –10 (Industrial) Unit Min Max Read Cycle t power [6] V CC (typical) to the first access 100 µ s t RC Read Cycle T ime 10 ns t AA Address to Data V alid 10 ns t OHA Data Hold from Address Change 3 ns t ACE CE LOW to[...]

  • Page 6

    CY7C1019D Document #: 38-05464 Rev . *E Page 6 of 1 1 Dat a Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min Max Unit V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current V CC = V DR = 2.0V , CE > V CC – 0.3V , V IN > V CC – 0.3V or V IN < 0.3V 3m A t CDR [3] Chip Deselect to Data Re[...]

  • Page 7

    CY7C1019D Document #: 38-05464 Rev . *E Page 7 of 1 1 Write Cycle No. 1 (CE Controlled) [16, 17] Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [16, 17] Switching W aveforms (continued) t WC DA T A V ALID t AW t SA t PWE t HA t HD t SD t SCE t SCE CE WE DA T A IO ADDRESS t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE DATA IN VALID NOTE 1[...]

  • Page 8

    CY7C1019D Document #: 38-05464 Rev . *E Page 8 of 1 1 Write Cycle No. 3 (WE Controlled, OE LOW) [1 1, 17] T ruth T able CE OE WE IO 0 –IO 7 Mode Power H X X High Z Power-Down S tandby (I SB ) L L H Data Out Read Active (I CC ) L X L Dat a In W rite Active (I CC ) L H H High Z Selected, Outputs Disabled Active (I CC ) Ordering Information Speed (n[...]

  • Page 9

    CY7C1019D Document #: 38-05464 Rev . *E Page 9 of 1 1 Package Diagrams Figure 1. 32-pin (400-Mil) Molded SOJ (51-85033) 51-85033-* B [+] Feedback[...]

  • Page 10

    CY7C1019D Document #: 38-05464 Rev . *E Page 10 of 1 1 © Cypress Semicond uctor Corporation , 2006-2007. The information cont ained herein is subject to change witho ut notice. Cypress Semiconduct or Corporation assumes no responsibility for the use of an y circuitr y other t han cir cuitry em bodied i n a Cypr ess produ ct. Nor does i t convey o [...]

  • Page 11

    CY7C1019D Document #: 38-05464 Rev . *E Page 1 1 of 1 1 Document History Page Document Title: CY7C1019D, 1-Mbit (128K x 8) St atic RAM Document Number: 38-05464 REV . ECN NO. Issue Date Orig. of Change Description of Chan ge ** 201560 See ECN SWI Advance Info rmation data sheet for C9 IPP *A 23 371 5 See ECN RKF DC parameters are modified as per ER[...]