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Cypress CY7C106D manual

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Table of contents for the manual

  • Page 1

    1-Mbit (256K x 4) S t atic RAM CY7C106D CY7C1006D Cypress Semic onductor Corpora tion • 198 Champion Court • San Jose , CA 95134-17 09 • 408-94 3-2600 Document #: 38-05459 Rev . *E Revised February 22, 2007 Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed —t AA = 10 ns • Low active power —I CC = 80 mA @ 1[...]

  • Page 2

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 2 of 1 1 Pin Configuration [2] Selection Guide CY7C106D-10 CY7C1006D-10 Unit Maximum Access T ime 10 ns Maximum Operating Current 80 mA Maximum S tandby Current 3 mA 1 2 3 4 5 6 7 8 9 11 14 15 16 20 19 18 17 21 24 23 22 12 13 25 28 27 26 A 7 A 0 A 1 A 2 A 3 A 4 A 15 A 6 A 8 A 9 A 10 A 11 A 12 A [...]

  • Page 3

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 3 of 1 1 Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not te sted. S torage T emperature .............. ................. .. –65°C to + 150°C Ambient T emperatur e with Power Applied .......................... .............[...]

  • Page 4

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 4 of 1 1 Cap acitance [4] Parameter Description T est Conditio ns Max Unit C IN : A dd r e ss e s Input Capacitance T A = 25 ° C, f = 1 MHz, V CC = 5.0V 7 pF C IN : Controls 10 pF C OUT Output Ca pacitance 10 pF Thermal Resist ance [4] Parameter Description T est Conditions 300-Mil Wide S OJ 40[...]

  • Page 5

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 5 of 1 1 Switching Characteristics (Over th e Operating Range ) [6 ] Parameter Descrip tion 7C106D-10 7C1006D-10 Unit Min Max Read Cycle t power [7] V CC (typical) to the first access 100 µ s t RC Read Cycle T ime 10 ns t AA Address to Data V alid 10 ns t OHA Data Hold from Address Change 3 ns [...]

  • Page 6

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 6 of 1 1 Dat a Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min Max Unit V DR V CC for Data Retention 2 . 0 V I CCDR Data Retention Current V CC = V DR = 2.0V , CE > V CC – 0.3V , V IN > V CC – 0.3V or V IN < 0.3V 3m A t CDR [4 ] Chip Deselec[...]

  • Page 7

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 7 of 1 1 Write Cycle No. 1 (CE Controlled) [18, 19] Write Cycle No. 2 (WE Controlled, OE HIGH During Write) [18, 19] Switching W aveforms (continued) t WC DA T A V ALID t AW t SA t PWE t HA t HD t SD t SCE ADDRESS CE DA T A IO WE DA T A V ALID t HD t SD t PWE t SA t HA t AW t SCE t WC t HZOE ADD[...]

  • Page 8

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 8 of 1 1 Write Cycle No. 3 (WE Controlled, OE LOW) [12, 19] T ruth T able CE OE WE Input/Output Mode Power H X X High Z Power-Down S tandby (I SB ) L L H Data Out Read Active (I CC ) L X L Data In Write Active (I CC ) L H H Hi gh Z Selected, Outputs Disabled Active (I CC ) Ordering Information S[...]

  • Page 9

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 9 of 1 1 Package Diagrams Figure 1. 28-pin (300-Mil) Molded SOJ, 51-85031 MIN. MAX. PIN 1 ID 0.291 0.300 0.050 TYP. 0.007 0.013 0.330 0.350 0.120 0.140 0.025 MIN. 0.262 0.272 0.697 0.713 0.013 0.019 0.014 0.020 0.032 0.026 A A DETAIL EXTERNAL LEAD DESIGN OPTION 1 OPTION 2 1 14 15 28 0.004 SEATIN[...]

  • Page 10

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 10 of 1 1 © Cypress Semicond uctor Corporation, 2006-2007. The i nformation cont ained herein is subject to change witho ut notice. Cypress Semiconductor Corporation assumes no responsibility for the use of an y circuitry other than circui try embodied in a Cypre ss product. Nor does it co nvey[...]

  • Page 11

    CY7C106D CY7C1006D Document #: 38-05459 Rev . *E Page 1 1 of 1 1 Document History Page Document Title: CY7C106D/CY7C1006D, 1-Mbit (256K x 4) St atic RAM Document Number: 38-05459 REV . ECN NO. Issue Date Orig. of Change Description of Cha nge ** 201560 See ECN SWI Advance information data sheet for C9 IPP *A 233693 See ECN RKF I CC ,I SB1 ,I SB2 S [...]