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Philips BGD814 manual

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Table of contents for the manual

  • Page 1

    DA T A SH EET Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 DISCRETE SEMICONDUCT ORS BGD814 860 MHz, 20 dB gain power doubler amplifier n dbook, halfpage M3D252[...]

  • Page 2

    2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doub ler amplifier BGD814 FEA TURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICA TIONS • CATV systems o[...]

  • Page 3

    2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 CHARA CTERISTICS Bandwidth 40 to 870 MHz; V B = 24 V; T mb =3 5 ° C; Z S =Z L =7 5 Ω . SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT G p power gain f = 45 MHz 19.7 − 20.3 dB f = 870 MHz 20.5 − 21.5 dB SL slope straight line f [...]

  • Page 4

    2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 Notes 1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz. 2. Tilt = 10.2 dB (55 to 745 MHz). 3. Tilt = 7.3 dB (55 to 547 MHz). 4. f p = 55.25 MHz; V p = 44 dBmV; f q = 805.25 MHz; V q = 44 dBmV; measured at f p +[...]

  • Page 5

    2001 Nov 01 5 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 handbook, halfpage 0 V o (dBmV) f (MHz) CTB (dB) 200 1000 − 50 − 60 − 80 − 90 − 70 52 48 40 36 44 400 600 800 MLD345 (1) (2) (3) (4) Fig.2 Composite triple beat as a function of frequency under tilted conditions. Z S =Z L =7 5 [...]

  • Page 6

    2001 Nov 01 6 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 handbook, halfpage 0 V o (dBmV) f (MHz) CTB (dB) 200 1000 − 40 − 50 − 70 − 80 − 60 52 48 40 36 44 400 600 800 MLD348 (1) (2) (3) (4) Fig.5 Composite triple beat as a function of frequency under tilted conditions. Z S =Z L =7 5 [...]

  • Page 7

    2001 Nov 01 7 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 P ACKA GE OUTLINE UNIT A 2 max. c ee 1 q Q max. q 1 q 2 U 1 max. U 2 W REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 20.8 9.1 0.51 0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15 3.85 2.4 38.1 25.4 10.2 4.[...]

  • Page 8

    2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 D A T A SHEET ST A TUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was p[...]

  • Page 9

    2001 Nov 01 9 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 NOTES[...]

  • Page 10

    2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 NOTES[...]

  • Page 11

    2001 Nov 01 11 Philips Semiconductors Product specification 860 MHz, 20 dB gain pow er doubler amplifier BGD814 NOTES[...]

  • Page 12

    © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No[...]