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Philips BGD906MI manual

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Table of contents for the manual

  • Page 1

    DA T A SH EET Product specification Supersedes data of 2000 Mar 28 2001 Nov 01 DISCRETE SEMICONDUCT ORS BGD906; BGD906MI 860 MHz, 21.5 dB gain power doubler amplifier b ook, halfpage M3D252[...]

  • Page 2

    2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doub ler amplifier BGD906; BGD906MI FEA TURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICA TIONS • CA[...]

  • Page 3

    2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI CHARA CTERISTICS Bandwidth 40 to 900 MHz; V B = 24 V ; T mb =3 5 ° C; Z S =Z L =7 5 Ω SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT G p power gain f = 50 MHz 21.2 21.5 21.8 dB f = 900 MHz 22 22.5 23 dB SL slope straigh[...]

  • Page 4

    2001 Nov 01 4 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI CSO composite second order distor tion 49 chs flat; V o = 47 dBmV ; f m = 860.5 MHz −− 63 − 59 dB 77 chs flat; V o = 44 dBmV ; f m = 548.5 MHz −− 74 − 65 dB 110 chs flat; V o = 44 dBmV ; f m = 746.5 MHz −− [...]

  • Page 5

    2001 Nov 01 5 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI handbook, halfpage 0 V o (dBmV) f (MHz) CTB (dB) 200 − 50 − 60 − 80 − 90 − 70 52 48 40 36 44 400 600 800 MGS661 (1) (1) (2) (3) (4) (2) (4) (3) Fig.2 Composite triple beat as a function of frequency under tilted con[...]

  • Page 6

    2001 Nov 01 6 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI handbook, halfpage 0 V o (dBmV) f (MHz) CTB (dB) 200 1000 − 50 − 60 − 80 − 90 − 70 52 48 40 36 44 400 600 800 MGS664 (4) (1) (2) (3) Fig.5 Composite triple beat as a function of frequency under tilted conditions. (1[...]

  • Page 7

    2001 Nov 01 7 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI handbook, halfpage 40 V o (dBmV) CTB (dB) 45 − 20 − 30 − 50 − 70 − 40 − 60 50 55 MGS667 (3) (2) (1) Fig.8 Composite triple beat as a function of output voltage. (1) Typ. +3 σ . (2) Typ. (3) Typ. − 3 σ . Z S =Z[...]

  • Page 8

    2001 Nov 01 8 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI P ACKA GE OUTLINE UNIT A 2 max. c ee 1 q Q max. q 1 q 2 U 1 max. U 2 W REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 20.8 9.1 0.51 0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15 3.85 2.4 38.1 [...]

  • Page 9

    2001 Nov 01 9 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI D A T A SHEET ST A TUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data[...]

  • Page 10

    2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI NOTES[...]

  • Page 11

    2001 Nov 01 11 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain pow er doubler amplifier BGD906; BGD906MI NOTES[...]

  • Page 12

    © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No[...]