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Cypress Semiconductor MoBL CY62148BN manual

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Table of contents for the manual

  • Page 1

    4-Mbit (512K x 8) S t atic RAM CY62148BN MoBL ® Cypress Semiconductor Corpora tion • 198 Champion Cou rt • San Jose , CA 95134-1 709 • 408-943-2 600 Document #: 001-06517 Rev . *A Revised August 2, 2006 Features • High Speed —7 0 n s • 4.5V–5.5V op eration • Low active pow er — T ypica l active curr ent: 2.5 mA @ f = 1 MHz — T [...]

  • Page 2

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 2 of 10 Note: 1. T ypical values are measured at V CC = 5V , T A = 25°C, and are i ncluded for reference only and are not tested or guaranteed. Pin Configuration Product Port folio Product V CC Range Spee d Te m p . Power Dissipation Operating, I CC Standb y ( I SB2 ) f = f max Ty p . [1] Ma x.[...]

  • Page 3

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 3 of 10 Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) S torage T emperature ............. .............. ...... –65°C to +150°C Ambient T e mperature with Power Applied ........... ............................ ...... –55 °C to +125°C Su[...]

  • Page 4

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 4 of 10 Switching Characteristics [5] Over the Operating Range Parameter Description 62148BNLL-70 Unit Min. Max. READ CYCLE t RC Read Cycle T ime 70 ns t AA Address to Data V alid 70 ns t OHA Data Hold from Address Ch ange 10 ns t ACE CE LOW to Data V alid 70 ns t DOE OE LOW to Data V alid 35 ns[...]

  • Page 5

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 5 of 10 Dat a Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min. Ty p . [1] Max. Unit V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current Com’l LL No input may exceed V CC + 0.3V V CC = V DR = 3.0V CE > V CC – 0.3V V IN > V CC – 0.[...]

  • Page 6

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 6 of 10 Write Cycle No. 1 (CE Controlled) [1 3] Write Cycle No. 2 (WE Controlled, OE HI GH During Write) [13, 14] Notes: 13. If CE goes HIGH simultaneously with WE going HI GH, t he output remains in a high-impe dance state. 14. Data I/O is high-impedance if OE = V IH . 15. During this period th[...]

  • Page 7

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 7 of 10 Write Cycle No.3 (WE Controlled, OE LOW) [13, 14] T ruth T able CE OE WE I/O 0 –I/O 7 Mode Powe r H X X High Z Power-Down S tandby (I SB ) L L H Data Out Read Active (I CC ) L X L Data In Wri t e Active (I CC ) L H H High Z Selected, Outp uts Disabled Active (I CC ) Ordering Informatio[...]

  • Page 8

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 8 of 10 Package Diagrams 0.546[13.868] 0.440[11.176] 0.101[2.565] 0.050[1.270] 0.014[0.355] 0.118[2.997] 0.004[0.102] 0.047[1.193] 0.006[0.152] 0.023[0.584] 0.793[20.142] 0.450[11.430] 0.566[14.376] 0.111[2.819] 0.817[20.751] BSC. 0.020[0.508] MIN. MAX. 0.012[0.304] 0.039[0.990] 0.063[1.600] SEA[...]

  • Page 9

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 9 of 10 © Cypress Semi con duct or Cor po rati on , 20 06 . The information con t a in ed he re i n is su bject to change wit hou t notice. Cypr ess S em ic on duct or Corpo ration assu mes no resp onsib ility for th e u se of any circuitry o ther than circui try embodied in a Cypress prod uct.[...]

  • Page 10

    CY62148BN MoBL ® Document #: 001-06517 Rev . *A Page 10 of 10 Document History Page Document Title: CY62148BN MoBL ® 4-Mbit (512K x 8) St atic RAM Document Number: 00 1-06517 REV . ECN NO. Issue Date Orig. of Change Description o f Change ** 426504 See ECN NXR New Dat a Sheet *A 485639 See ECN VKN Corrected the typo in the Array size i n the Logi[...]